Resistive switching properties through iodine migrations of a hybrid perovskite insulating layer
This study reports a low‐temperature processable, resistive switching (RS) device based on
an inorganic–organic hybrid perovskite, ie, methylammonium lead iodide (CH3NH3PbI3 or …
an inorganic–organic hybrid perovskite, ie, methylammonium lead iodide (CH3NH3PbI3 or …
Negative differential resistance effect and dual bipolar resistive switching properties in a transparent Ce-based devices with opposite forming polarity
In this work, we have fabricated a transparent Ce-based device with aluminum-zinc oxide
(AZO) as semiconducting electrode by radio-frequency (RF) sputtering on a transparent …
(AZO) as semiconducting electrode by radio-frequency (RF) sputtering on a transparent …
On the role of the metal oxide/reactive electrode interface during the forming procedure of valence change ReRAM devices
One of the key issues of resistive switching memory devices is the so called “forming”
process, a one time process at a high voltage, which initializes the resistive switching at …
process, a one time process at a high voltage, which initializes the resistive switching at …
Metal-insulator transition and resistive switching in Y-doped CeO 2 ceramics
Y-doped ceria, Y0. 16Ce0. 84O1. 92, is an oxide ion conductor that shows n-type
conductivity under a small applied voltage. With increasing voltage, resistive switching by 2 …
conductivity under a small applied voltage. With increasing voltage, resistive switching by 2 …
Tin Oxide Nanorod Array-Based Photonic Memristors with Multilevel Resistance States Driven by Optoelectronic Stimuli
SP Swathi, A Makkaramkott… - ACS Applied Materials & …, 2023 - ACS Publications
One-dimensional (1D) metal oxide-based photonic memristors, combining information
storage and optical response, have shown great potential for the design and development of …
storage and optical response, have shown great potential for the design and development of …
Bipolar resistive switching characteristics of a sol-gel InZnO oxide semiconductor
CC Hsu, CC Tsao, YH Chen, XZ Zhang - Physica B: Condensed Matter, 2019 - Elsevier
This paper investigates the bipolar resistive switching characteristics of a sol-gel Ga-free
InZnO (IZO) oxide semiconductor. Resistive random-access memories (RRAMs) using IZO …
InZnO (IZO) oxide semiconductor. Resistive random-access memories (RRAMs) using IZO …
An insight into the dopant selection for CeO2-based resistive-switching memory system: a DFT and experimental study
F Hussain, M Imran, AM Rana, RMA Khalil… - Applied …, 2018 - Springer
The aim of this study is to figure out better metal dopants for CeO 2 for designing highly
efficient non-volatile memory (NVM) devices. The present DFT work involves four different …
efficient non-volatile memory (NVM) devices. The present DFT work involves four different …
Al2O3 thin film multilayer structure for application in RRAM devices
AN Rodrigues, YP Santos, CL Rodrigues… - Solid-State …, 2018 - Elsevier
This study investigated the effect of resistive switching on Pt/Al 2 O 3/Cu/Al 2 O 3/ITO
multilayer structures grown by RF/DC magnetron sputtering. A reproducible unipolar …
multilayer structures grown by RF/DC magnetron sputtering. A reproducible unipolar …
Improved Resistive Switching Behavior of Defective Fluorite Structured Sm2Ce2O7 Thin Film Prepared by RF Sputtering
ZM Tu, CC Huang, TH Hsu, RW Chuang… - Ceramics International, 2024 - Elsevier
Abstract The Al/Sm 2 Ce 2 O 7/ITO (Al/SCO/ITO) structure resistive random access memory
(RRAM) was prepared using RF magnetron sputtering, and its resistive switching (RS) …
(RRAM) was prepared using RF magnetron sputtering, and its resistive switching (RS) …
Resistive switching characteristics of directly patterned Y-doped CeO2 by photochemical organic-metal deposition
Resistive RAM (ReRAM), which uses the anion-based resistive switching characteristic of
transition metal oxide, is one of the strong candidates for next-generation non-volatile …
transition metal oxide, is one of the strong candidates for next-generation non-volatile …