HVDC circuit breakers–A review
HVDC circuit breakers are of increasing importance, as multi-terminal high voltage DC
(HVDC) transmission becomes a commercial reality. Multiple HVDC breaker technologies …
(HVDC) transmission becomes a commercial reality. Multiple HVDC breaker technologies …
Study of voltage balancing techniques for series-connected insulated gate power devices
VU Pawaskar, G Gohil… - IEEE Journal of Emerging …, 2021 - ieeexplore.ieee.org
An efficient and cost-effective medium-voltage (MV) power semiconductor switch capable of
high switching speed is highly desirable for many existing and emerging high-power MV …
high switching speed is highly desirable for many existing and emerging high-power MV …
Comparison of 4.5-kV press-pack IGBTs and IGCTs for medium-voltage converters
F Filsecker, R Alvarez, S Bernet - IEEE transactions on …, 2012 - ieeexplore.ieee.org
Recently developed insulated-gate bipolar transistor (IGBT) press-pack (PP) devices with a
blocking voltage of 4.5 kV are being used in medium-voltage converters as an alternative to …
blocking voltage of 4.5 kV are being used in medium-voltage converters as an alternative to …
An analysis of high-power IGBT switching under cascade active voltage control
Y Wang, PR Palmer, AT Bryant… - IEEE Transactions …, 2009 - ieeexplore.ieee.org
A new gate-drive solution, cascade active voltage control (Cascade AVC), employs classic
feedback-control methods with an inner loop controlling the insulated-gate bipolar-transistor …
feedback-control methods with an inner loop controlling the insulated-gate bipolar-transistor …
Series connecting devices for high-voltage power conversion
FV Robinson, V Hamidi - 2007 42nd International Universities …, 2007 - ieeexplore.ieee.org
Novel dynamic voltage-sharing schemes have been developed to allow any high-voltage
power-semiconductor device, eg thyristor, IGCT, IGBT or power MOSFET, to be series …
power-semiconductor device, eg thyristor, IGCT, IGBT or power MOSFET, to be series …
A 4000V input auxiliary power supply with series connected SiC MOSFETs for MMC-based HVDC system
Y Han, W Chen, X Chen, X Ma, Y Sha… - 2016 IEEE 8th …, 2016 - ieeexplore.ieee.org
Modular multi-level converter (MMC) is composed of many sub-modules (SMs). Each SM
needs an independent auxiliary power supply to drive IGBT and control the system. In HVDC …
needs an independent auxiliary power supply to drive IGBT and control the system. In HVDC …
Series connection of IGBT
T Van Nguyen, PO Jeannin, E Vagnon… - 2010 Twenty-Fifth …, 2010 - ieeexplore.ieee.org
This article analyzes the effects of parasitic capacitances in the series connection of IGBT,
which exist naturally due to gate driver and power circuit geometry. Two solutions, that can …
which exist naturally due to gate driver and power circuit geometry. Two solutions, that can …
Series connection of IGBTs with self-powering technique and 3-D topology
T Van Nguyen, PO Jeannin, E Vagnon… - IEEE Transactions …, 2011 - ieeexplore.ieee.org
This paper analyzes the effects of parasitic capacitances in the series connection of
insulated-gate bipolar transistors (IGBTs) on their voltage sharing. These parasitics exist …
insulated-gate bipolar transistors (IGBTs) on their voltage sharing. These parasitics exist …
Power converter having integrated capacitor-blocked transistor cells
BACKGROUND Silicon power semiconductors are manufactured in stan dardized, yet only
in few available Voltage ratings, typically 600 V, 1.2 kV, 1.7 kV, 3.3 kV, 4.5 kV and 6.5 kV …
in few available Voltage ratings, typically 600 V, 1.2 kV, 1.7 kV, 3.3 kV, 4.5 kV and 6.5 kV …
Closed loop dv/dt control for equal voltage sharing between series connected SiC MOSFETs
VU Pawaskar, G Gohil - 2019 IEEE Energy Conversion …, 2019 - ieeexplore.ieee.org
Series-connected Low Voltage (LV) devices (SiC MOSFETs) is an efficient and cost-effective
approach to realize Medium Voltage (MV) power switch for many emerging MV power …
approach to realize Medium Voltage (MV) power switch for many emerging MV power …