Ferroelectric interfacial devices consist of materials systems whose interfacial electronic
properties (such as a 2D electron gas or an interfacial magnetic spin configuration) are …

Chemical and electronic properties of dielectric oxide interfaces as obtained using
photoelectron spectroscopy are presented and discussed. Interface preparation includes the …

This article reviews the scientific understanding and progress of interfacing plasmonic
particles with ferroelectrics in order to facilitate the absorption of low-energy photons and …

Abstract Pb (Zr, Ti) O3 (PZT) is the most common ferroelectric (FE) material widely used in
solid‐state technology. Despite intense studies of PZT over decades, its intrinsic band …

The compensation of the depolarization field in ferroelectric layers requires the presence of
a suitable amount of charges able to follow any variation of the ferroelectric polarization …

We investigate the effect of the nature of the substrate and the bottom interface on the out-of-
plane polarization orientation of ultrathin (10-nm) lead zirconate titanate (PZT) thin films of …

Epitaxial La0. 1Bi0. 9FeO3 (LBFO) films with SrRuO3 (SRO) bottom electrodes were
fabricated on SrTiO3 (001) substrates by magnetron sputtering. The LBFO thin films exhibit …

In this work, epitaxial Pb (Zr0. 4Ti0. 6) O3 (PZT) thin films with different thicknesses were
deposited on Nb-doped SrTiO3 (NSTO) single-crystal substrates by chemical solution …

Fe (acceptor) and Nb (donor) doped epitaxial Pb (Zr0. 2Ti0. 8) O3 (PZT) films were grown on
single crystal SrTiO3 substrates and their electric properties were compared to those of un …

The emerging field of electronics based on ferro-functional materials relies on driving
effectively and predictably a ferroelectric system between different polarization states …