Effects of gate-induced electric fields on semiconductor Majorana nanowires
We study the effect of gate-induced electric fields on the properties of semiconductor-
superconductor hybrid nanowires which represent a promising platform for realizing …
superconductor hybrid nanowires which represent a promising platform for realizing …
Visible light-assisted high-performance mid-infrared photodetectors based on single InAs nanowire
One-dimensional InAs nanowires (NWs) have been widely researched in recent years.
Features of high mobility and narrow bandgap reveal its great potential of optoelectronic …
Features of high mobility and narrow bandgap reveal its great potential of optoelectronic …
[HTML][HTML] Prospects of silicide contacts for silicon quantum electronic devices
K Tsoukalas, F Schupp, L Sommer, I Bouquet… - Applied Physics …, 2024 - pubs.aip.org
Metal contacts in semiconductor quantum electronic devices can offer advantages over
doped contacts, primarily due to their reduced fabrication complexity and lower temperature …
doped contacts, primarily due to their reduced fabrication complexity and lower temperature …
Standalone photoconversion of CO2 using Ti and TiOx-sandwiched heterojunction photocatalyst of CuO and CuFeO2 films
Artificial photoconversion of carbon dioxide to value-added chemicals remains a challenge.
In this work, we synthesize heterojunction copper oxide and copper iron oxide (CuO/CuFeO …
In this work, we synthesize heterojunction copper oxide and copper iron oxide (CuO/CuFeO …
Anisotropic Pauli spin-blockade effect and spin–orbit interaction field in an InAs nanowire double quantum dot
We report on experimental detection of the spin–orbit interaction field in an InAs nanowire
double quantum dot device. In the spin blockade regime, leakage current through the …
double quantum dot device. In the spin blockade regime, leakage current through the …
Performance Investigation of Multilayer MoS2 Thin-Film Transistors Fabricated via Mask-free Optically Induced Electrodeposition
Transition metal dichalcogenides, particularly MoS2, have recently received enormous
interest in explorations of the physics and technology of nanodevice applications because of …
interest in explorations of the physics and technology of nanodevice applications because of …
Vertical monolithic integration of wide-and narrow-bandgap semiconductor nanostructures on graphene films
We report monolithic integration of indium arsenide (InAs) nanorods and zinc oxide (ZnO)
nanotubes using a multilayer graphene film as a suspended substrate, and the fabrication of …
nanotubes using a multilayer graphene film as a suspended substrate, and the fabrication of …
Minority carrier decay length extraction from scanning photocurrent profiles in two-dimensional carrier transport structures
YC Wei, CH Chu, MH Mao - Scientific Reports, 2021 - nature.com
Carrier transport was studied both numerically and experimentally using scanning
photocurrent microscopy (SPCM) in two-dimensional (2D) transport structures, where the …
photocurrent microscopy (SPCM) in two-dimensional (2D) transport structures, where the …
Fully printed inorganic schottky diode
Inorganic semiconductors have the potential features to enhance the stability and
performance of printed electronic devices. In this work, we present a microcantilever (μC) …
performance of printed electronic devices. In this work, we present a microcantilever (μC) …
Measurements of the spin-orbit interaction and Landé g factor in a pure-phase InAs nanowire double quantum dot in the Pauli spin-blockade regime
We demonstrate direct measurements of the spin-orbit interaction and Landé g factors in a
semiconductor nanowire double quantum dot. The device is made from a single-crystal pure …
semiconductor nanowire double quantum dot. The device is made from a single-crystal pure …