Electrical and optical characterisation of InGaAsSb-based photodetectors for SWIR
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We report a detailed analysis of the influence of the doping level and nanoribbon width on
the localized surface plasmon resonance (LSPR) by means of reflectance measurements …

Ion irradiation of semiconductors has emerged as a promising approach for fabricating self-
organized nanosystems with high atomic precision, despite often being accompanied by …

We design and demonstrate newcomers in the field of frequency down-converters based on
quasi-phase matching: low-loss orientation-patterned gallium antimonide ridge waveguides …

We investigate the impact of the growth conditions of AlGaAsSb cladding layers on the
properties of interband cascade lasers (ICLs). For an optimized structure emitting at 3.3 µm …

We present a theoretical and experimental study of guided-mode resonant (GMR) spectral
filters made of III-V semiconductors and operating in the long-wave infrared (LWIR) …

We demonstrate surface enhanced infrared absorption spectroscopy using 1-dimensional
highly doped semiconductors based on Si-doped InAsSb plasmonic nano-antennas …

Plasmonic behavior in the far-infrared (IR) and terahertz (THz) ranges can facilitate a lot of
applications in communication, imaging or sensing, security, and biomedical domains …

Image analysis-based measurement techniques are gaining popularity thanks to their ability
of measuring different kinds of mechanical fields without interfering with the measurand …

Control over the Te doping concentration is especially challenging in the mass-production of
optically transparent, high-resistivity Te-doped GaSb crystals. Driven by the necessity to …