H Kwak, J Kim - Nanomanufacturing and Metrology, 2023 - Springer
We review the measurement methods and thickness characterization algorithms of semiconductor multilayer devices. Today's ultrahigh-density, high-energy-efficient three …
Y Shao, JA del Alamo - IEEE electron device letters, 2022 - ieeexplore.ieee.org
In this letter, we report the realization of sub-10-nm diameter vertical nanowire (VNW) p-type tunnel FETs (TFETs). Using a broken-band GaSb/InAsSb heterostructure design and a top …
Sb-based semiconductors are critical p-channel materials for III–V complementary metal oxide semiconductor (CMOS) technology, while the performance of Sb-based metal-oxide …
Y Shao, M Pala, D Esseni… - IEEE transactions on …, 2022 - ieeexplore.ieee.org
This work studies the diameter scaling behavior of broken-band GaSb/InAs vertical nanowire (VNW) Esaki diodes. A top-down fabrication process involving precise reactive-ion …
Vertical nanowire n-type (InAs) and p-type (GaSb) transistors are co-processed and co- integrated using a gate-last process, enabling short gate-lengths (L g= 40 nm) and allowing …
In this paper, for the first time we proposed a novel GaAs 1-x Sb x-on-Insulator (GASOI) FinFET on GaAS substrate using well calibrated simulation models. Impact of this novel …
J Jang, J Song, SS Lee, S Jeong, BJ Lee… - Materials Science in …, 2021 - Elsevier
Gallium antimonide (GaSb) has been widely used for optoelectronic devices in recent years, but the current transport mechanism at the metal-GaSb junction has not yet been clearly …
GaSb is considered as an attractive p-type channel material for future III-V metal-oxide- semiconductor (MOS) technologies, but the processing conditions to utilize the full device …
The effect of gate-length variation on key transistor metrics for vertical nanowire p-type GaSb metal-oxide-semiconductor field-effect transistors (MOSFETs) are demonstrated using a …