Molecular beam epitaxy growth and scanning tunneling microscopy study of 2D layered materials on epitaxial graphene/silicon carbide

H Lu, W Liu, H Wang, X Liu, Y Zhang, D Yang… - …, 2023 - iopscience.iop.org
Since the advent of atomically flat graphene, two-dimensional (2D) layered materials have
gained extensive interest due to their unique properties. The 2D layered materials prepared …

Morphology-controlled synthesis, growth mechanism, and applications of tellurium nanostructures

J Li, Q Yang, D He, Y Wang, E Hwang, Y Yang - Materials Advances, 2024 - pubs.rsc.org
Tellurium (Te) nanostructures, especially two-dimensional (2D) tellurene, have recently
attracted considerable attention due to their distinctive chiral-chain structures and intriguing …

Direct Observations of Spontaneous In‐Plane Electronic Polarization in 2D Te Films

ZH Zhang, LZ Yang, HJ Qin, WA Liao, H Liu… - Advanced …, 2024 - Wiley Online Library
Single‐element polarization in low dimensions is fascinating for constructing next‐
generation nanoelectronics with multiple functionalities, yet remains difficult to access with …

Doping Elemental 2D Semiconductor Te through Surface Se Substitutions

G Miao, N Su, Z Yu, B Li, X Huang, W Zhong, Q Guo… - Physical Review Letters, 2024 - APS
The development of two-dimensional (2D) semiconductors is limited by the lack of doping
methods. We propose surface isovalent substitution as an efficient doping mechanism for 2D …

Critical behavior in the epitaxial growth of two-dimensional tellurium films on SrTiO3 (001) substrates

H Zhang, D Song, F Huang, J Zhang… - Chinese Physics …, 2023 - iopscience.iop.org
Materials' properties may differ in the thin-film form, especially for epitaxial ultra-thin films,
where the substrates play an important role in their deviation from the bulk quality. Here by …

Selenium/Tellurium Two-Dimensional Structures: from Isovalent Se Dopants in Te to Atomically Thin Se Films

G Miao, N Su, Z Yu, B Li, X Huang, W Zhong… - arXiv preprint arXiv …, 2023 - arxiv.org
Two-dimensional (2D) elemental semiconductors have great potential for device
applications, but their performance is limited by the lack of efficient doping methods. Here …