Van der Waals‐Interface‐Dominated All‐2D Electronics

X Zhang, Y Zhang, H Yu, H Zhao, Z Cao… - Advanced …, 2023 - Wiley Online Library
The interface is the device. As the feature size rapidly shrinks, silicon‐based electronic
devices are facing multiple challenges of material performance decrease and interface …

Recent advances in ambipolar transistors for functional applications

Y Ren, X Yang, L Zhou, JY Mao… - Advanced Functional …, 2019 - Wiley Online Library
Ambipolar transistors represent a class of transistors where positive (holes) and negative
(electrons) charge carriers both can transport concurrently within the semiconducting …

Adsorption of SO2 and NO2 molecule on intrinsic and Pd-doped HfSe2 monolayer: A first-principles study

H Cui, P Jia, X Peng - Applied Surface Science, 2020 - Elsevier
HfSe 2 monolayer with high electron mobility and chemical activity is a good candidate for
gas sensing application. Pd-doping with high catalytic performance would effectively …

Carrier‐Type Modulation and Mobility Improvement of Thin MoTe2

D Qu, X Liu, M Huang, C Lee, F Ahmed… - Advanced …, 2017 - Wiley Online Library
A systematic modulation of the carrier type in molybdenum ditelluride (MoTe2) field‐effect
transistors (FETs) is described, through rapid thermal annealing (RTA) under a controlled …

van der Waals Contact for Two-Dimensional Transition Metal Dichalcogenides

L Ma, Y Wang, Y Liu - Chemical Reviews, 2024 - ACS Publications
Two-dimensional (2D) transition metal dichalcogenides (TMDs) have emerged as highly
promising candidates for next-generation electronics owing to their atomically thin structures …

Flexible and high‐performance all‐2D photodetector for wearable devices

J Yao, G Yang - Small, 2018 - Wiley Online Library
Emerging novel applications at the forefront of innovation horizon raise new requirements
including good flexibility and unprecedented properties for the photoelectronic industry. On …

Contact Engineering High-Performance n-Type MoTe2 Transistors

MJ Mleczko, AC Yu, CM Smyth, V Chen, YC Shin… - Nano …, 2019 - ACS Publications
Semiconducting MoTe2 is one of the few two-dimensional (2D) materials with a moderate
band gap, similar to silicon. However, this material remains underexplored for 2D electronics …

Two‐dimensional heterostructure promoted infrared photodetection devices

G Rao, X Wang, Y Wang, P Wangyang, C Yan, J Chu… - InfoMat, 2019 - Wiley Online Library
It is a rapidly developed subject in expanding the fundamental properties and application of
two‐dimensional (2D) materials. The weak van der Waals interaction in 2D materials …

Double‐Gate MoS2 Field‐Effect Transistors with Full‐Range Tunable Threshold Voltage for Multifunctional Logic Circuits

J Yi, X Sun, C Zhu, S Li, Y Liu, X Zhu, W You… - Advanced …, 2021 - Wiley Online Library
Multifunctional reconfigurable devices, with higher information capacity, smaller size, and
more functions, are urgently needed and draw most attention in frontiers in information …

Graphene bridge heterostructure devices for negative differential transconductance circuit applications

M Lee, TW Kim, CY Park, K Lee, T Taniguchi… - Nano-Micro Letters, 2023 - Springer
Two-dimensional van der Waals (2D vdW) material-based heterostructure devices have
been widely studied for high-end electronic applications owing to their heterojunction …