Several research groups have been actively pursuing antimonide-based electronic devices
in recent years. The advantage of narrow-bandgap Sb-based devices over conventional …

This paper presents an overview of the rapid progress being made in the development of
InP based devices for high speed applications. Over the past few decades, major aero …

This paper presents Si/SiGe: C and InP/GaAsSb HBTs which feature specific assets to
address submillimeter-wave and THz applications. Process and modeling status and …

This paper reports on SiGe NPN HBTs with unity gain cutoff frequency (f T) of 207 GHz and
an f max extrapolated from Mason's unilateral gain of 285 GHz. f max extrapolated from …

Here we report on the Ga self-catalyzed growth of near full-composition-range energy-gap-
tunable GaAs1–x Sb x nanowires by molecular-beam epitaxy. GaAs1–x Sb x nanowires with …

The development of InP/GaAsSb DHBTs is reviewed and contextualized with respect to
other III-V high-speed technologies. Pertinent material properties and challenges in the …

Recent advances allowing high-quality epitaxial heterointerfaces and delicately controlled
shape anisotropy combined with versatile and scalable chemical synthesis make nanorod …

We propose to employ a grading of the molar fraction in the source region of III-V hetero-
junction tunnel-FETs as a means to improve the on-current without degrading the …

This work presents a Si-based approach to develop high-speed devices for broadband
communication applications. SiGe HBTs with f/sub T/and f/sub max/of 375 GHz and 210 …

We demonstrate staggered (" type-II") lineup lattice-matched GaAs/sub 0.51/Sb/sub 0.49/-
InP unitraveling carrier photodiodes (UTC-PDs) for application near 1.55 μm. The GaAsSb …