DFB lasers between 760 nm and 16 μm for sensing applications

W Zeller, L Naehle, P Fuchs, F Gerschuetz… - Sensors, 2010 - mdpi.com
Recent years have shown the importance of tunable semiconductor lasers in optical
sensing. We describe the status quo concerning DFB laser diodes between 760 nm and …

Quantum cascade lasers in chemical physics

RF Curl, F Capasso, C Gmachl, AA Kosterev… - Chemical Physics …, 2010 - Elsevier
In the short space of 15years since their first demonstration, quantum cascade lasers have
become the most useful sources of tunable mid-infrared laser radiation. This Letter …

High-performance midinfrared quantum cascade lasers

F Capasso - Optical Engineering, 2010 - spiedigitallibrary.org
The design and operating principles of quantum cascade lasers (QCLs) are reviewed along
with recent developments in high-power cw and broadband devices. Cw power levels of …

Temperature sensitivity of the electro-optical characteristics for mid-infrared (λ= 3–16 μm)-emitting quantum cascade lasers

D Botez, CC Chang, LJ Mawst - Journal of Physics D: Applied …, 2015 - iopscience.iop.org
The temperature dependences of the threshold current and slope efficiency, as represented
by their respective characteristic temperature coefficients T 0 and T 1, are discussed for …

Laser spectroscopy on volatile sulfur compounds: possibilities for breath analysis

L Ciaffoni, R Peverall, GAD Ritchie - Journal of breath research, 2011 - iopscience.iop.org
There is an emerging interest in the detection of volatile sulfur compounds (VSCs) in the
breath environment, given their biological relevance as potential signatures of several …

Mid-infrared semiconductor heterostructure lasers for gas sensing applications

A Bauer, K Rößner, T Lehnhardt, M Kamp… - Semiconductor …, 2010 - iopscience.iop.org
An overview of the three competing mid-infrared semiconductor laser approaches, being
diode, quantum cascade and interband cascade laser designs, is given. Limiting factors as …

High power Sb-free quantum cascade laser emitting at 3.3 μm above 350 K

A Bismuto, M Beck, J Faist - Applied Physics Letters, 2011 - pubs.aip.org
The design and implementation of a short wavelength strain-compensated quantum
cascade laser based on In0. 72Ga0. 28As/In0. 52Al0. 48As–AlAs on InP is presented. We …

Optimization of Type-II 'W'shaped InGaAsP/GaAsSb nanoscale-heterostructure under electric field and temperature

R Dolia, G Bhardwaj, AK Singh, S Kumar… - Superlattices and …, 2017 - Elsevier
Designing of a type-II nanoscale heterostructure and simulating their optical properties is
critical for many applications and remains a challenge. This paper reports designing of a …

Room Temperature CW Operation of Short Wavelength Quantum Cascade Lasers Made of Strain Balanced Ga $ _ {\bm x} $ In $ _ {\bm {1-x}} $ As/Al $ _ {\bm y} $ In …

F Xie, C Caneau, HP LeBlanc… - IEEE Journal of …, 2011 - ieeexplore.ieee.org
We present our recent development of short wavelength quantum cascade lasers (QCLs)
made of strain balanced Ga _x In _1-x As/Al _y In _1-y As material on InP substrates. We …

High peak power λ∼ 3.3 and 3.5 μm InGaAs/AlAs (Sb) quantum cascade lasers operating up to 400 K

JP Commin, DG Revin, SY Zhang, AB Krysa… - Applied Physics …, 2010 - pubs.aip.org
We demonstrate λ∼ 3.5 μ m and λ∼ 3.3 μ m strain compensated In 0.7 Ga 0.3 As/AlAs
(Sb)/InP quantum cascade lasers operating in pulse regime at temperatures up to at least …