Near-infrared color centers in silicon are emerging candidates for on-chip integrated
quantum emitters, optical-access quantum memories, and sensing. We access ensemble G …

The creation of fluorescent defects in silicon is a key stepping stone toward assuring the
integration perspectives of quantum photonic devices into existing technologies. Here, we …

Defect engineering is foundational to classical electronic device development and for
emerging quantum devices. Here, we report on defect engineering of silicon with ion pulses …

The study of defect centers in silicon has been recently reinvigorated by their potential
applications in optical quantum information processing. A number of silicon defect centers …

Quantum communication can be realized by transmitting photons that carry quantum
information. Due to decoherence, the information encoded in the quantum state of a single …

Solid-state point defects are attracting increasing attention in the field of quantum
information science, because their localized states can act as a spin-photon interface in …

Single photons are flying qubits which can carry quantum information over long distances
with low decoherence. Integrated quantum photonics, which aims to generate, process, and …

The dynamics of structural defects created in semiconductor devices and detectors by ion
irradiation present a multi-scale problem with characteristic times ranging from pico-seconds …