Abstract CuIn 1-x Ga x Se 2 nanocrystals (CIGSe NCs) were synthesized with different
gallium (Ga) content by the hot injection process at low reaction temperature for the first time …

In Cu (In, Ga) Se2 (CIGS) thin‐film solar cells, interface recombination is one of the most
important limiting factors with respect to device performance. Herein, metal–insulator …

The current work presents a novel structure of epitaxially grown CuInGaSe 2/SiO 2 on n-Si
substrate using the liquid phase epitaxy (LPE) technique. The electrical and dielectric …

Thin film solar cells have been extensively explored because of their low cost, good low
light, and high efficiencies. In this contribution, the novel Cu (Fe, Sn) S4 (CFTS) thin film …

Abstract CIGSeS (Cu (In, Ga)(Se, S) 2,(CIGSeS)) absorbers were fabricated by sputtering a
quaternary ceramic CIGSe targets and annealing in sulfur-containing atmosphere …

Nano-polycrystalline thin films of CuIn 1-x Al x Se 2 (CIAS) chalcopyrite material are re-
grown on annealing the 700 nm thick Cu/In/Al/Se stack at temperatures ranging from 523 to …

In this study, it was focused on the structural and morphological and the corrosion properties
of CIS NTFs electrodeposited on ITO substrates before and after annealing. After deposition …

CuInGaS 2 (CIGS) absorber materials were synthesis by spray pyrolysis on glass substrates,
using special concentrations of gallium in the sputtering solutions ([Ga 3+]= y.[In 3+], y vary …

The present article deals with engineering of physicochemical and optoelectronic properties
of soft chemical route synthesized CdS/CuInGaSe 2 heterojunction thin films upon air …

CuIn 1-x Ga x Se 2 (x= 0.3) thin films have been prepared with two thickness 500nm and
1000nm by thermal evaporation technique on glass, silicon and ITO substrates at room …