Two-dimensional transition metal dichalcogenides (TMDs) offer fascinating opportunities for
fundamental nanoscale science and various technological applications. They are a …

Atomic layer deposition (ALD) is a vapor-phase deposition technique that has attracted
increasing attention from both experimentalists and theoreticians in the last few decades …

Hafnium oxide (HfO2)-based ferroelectric tunnel junctions (FTJs) have been extensively
evaluated for high-speed and low-power memory applications. Herein, we investigated the …

The HfO2-based ferroelectric tunnel junction has received outstanding attention owing to its
high-speed and low-power characteristics. In this work, aluminum-doped HfO2 (HfAlO) …

Structural, optical, and electrical properties of granular thin films of CdSe deposited on HfO 2
dielectric layer are reported. The thin films were deposited on fluorine-doped tin oxide (FTO) …

Abstract (Al–Hf) mixed oxide thin films (HfAlO) are attracted by many researchers because of
their outstanding optical and electrical properties compared to hafnium oxide (HfO 2). This …

HfO2-based ferroelectric (FE) materials have emerged as a promising material for non-
volatile memory applications because of remanent polarization, scalability of thickness …

The discovery of ferroelectricity in HfO 2-based materials with high dielectric constant has
inspired tremendous research interest for next-generation electronic devices. Importantly …

We employ a modified atomic layer deposition process utilizing in-situ mixing of precursors
to obtain doped hafnium oxide thin films with improved ferroelectric properties. The method …

Hafnium nitride (HfN) possesses excellent mechanical properties such as high hardness
and wear resistance, and is usually used as a protective coating on high-end equipment and …