Extended Gate to source overlap Heterojunction Vertical TFET: Design, analysis, and optimization with process parameter variations
This report highlights the simulated results of Extended gate to source overlap
Heterojunction Vertical Tunnel field effect transistor (EGH-VTFET) for low-power and high …
Heterojunction Vertical Tunnel field effect transistor (EGH-VTFET) for low-power and high …
Semi-classical Monte Carlo study of the impact of tensile strain on the performance limits of monolayer MoS2 n-channel MOSFETs
AA Bhatti, BT Archer, N Navlakha, LF Register… - Journal of Applied …, 2023 - pubs.aip.org
The effects of tensile strain and contact transmissivity on the performance limits of monolayer
molybdenum disulfide ( MoS 2) nanoscale n-channel MOSFETs are studied using a semi …
molybdenum disulfide ( MoS 2) nanoscale n-channel MOSFETs are studied using a semi …
GeSn based heterojunction double-gate tripple metal layer vertical TFET with enhanced DC and Analog/RF performance
In this article, low-bandgap material GeSn and high bandgap Si material heterojunction
(GeSn/Si) based double gate triple metal layer Vertical TFET is designed and analyzed by …
(GeSn/Si) based double gate triple metal layer Vertical TFET is designed and analyzed by …
Investigation of a Double Gate Work-function Engineered Ge-Source Vertical TFET
In this manuscript, small bandgap material Germanium-based work-function engineered
double gate Vertical TFET device is analyzed through the ATLAS TCAD simulator. Dual …
double gate Vertical TFET device is analyzed through the ATLAS TCAD simulator. Dual …