Hafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong
in the memory arena over the last two decades. Its dielectric properties have been …

The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …

Ultra-scaled transistors are of interest in the development of next-generation electronic
devices,–. Although atomically thin molybdenum disulfide (MoS2) transistors have been …

Memristive and nanoionic devices have recently emerged as leading candidates for
neuromorphic computing architectures. While top-down fabrication based on conventional …

This article presents a review of the current development and challenges in memristor
modeling. We review the mechanisms of memristive devices based on various …

Resistive random access memory (RRAM) devices are receiving increasing extensive
attention due to their enhanced properties such as fast operation speed, simple device …

The memristor, is a promising building block for next-generation non-volatile memory,
artificial neural networks,,–and bio-inspired computing systems,. Organizing small …

As human society enters the big data era, huge data storage and energy‐efficient data
processing are in great demand. The resistive switching device is an emerging device with …

Neuromorphic computing holds promise for building next‐generation intelligent systems in a
more energy‐efficient way than the conventional von Neumann computing architecture …

Resistive switching effect in transition metal oxide (TMO) based material is often associated
with the valence change mechanism (VCM). Typical modeling of valence change resistive …