Heterogeneous integration of high-k complex-oxide gate dielectrics on wide band-gap high-electron-mobility transistors
Heterogeneous integration of dissimilar crystalline materials has recently attracted
considerable attention due to its potential for high-performance multifunctional electronic …
considerable attention due to its potential for high-performance multifunctional electronic …
O2 Plasma Alternately Treated ALD-Al2O3 as Gate Dielectric for High Performance AlGaN/GaN MIS-HEMTs
Q Wang, M Pan, P Zhang, L Wang, Y Yang, X Xie… - IEEE …, 2023 - ieeexplore.ieee.org
This article systematically studies the AlGaN/GaN MIS-HEMTs using the O2 plasma
alternately treated Al2O3 as gate dielectric. The X-ray photoelectron spectroscopy (XPS) …
alternately treated Al2O3 as gate dielectric. The X-ray photoelectron spectroscopy (XPS) …
Interface charge engineering on an in situ SiNx/AlGaN/GaN platform for normally off GaN MIS-HEMTs with improved breakdown performance
This work adopts interface charge engineering to fabricate normally off metal–insulator–
semiconductor high electron mobility transistors (MIS-HEMTs) on an in situ SiN …
semiconductor high electron mobility transistors (MIS-HEMTs) on an in situ SiN …
Threshold voltage modulation on a CTL-based monolithically integrated E/D-mode GaN inverters platform with improved voltage transfer performance
This work demonstrates a high-performance monolithically integrated GaN inverters
platform, which incorporates enhancement-mode (E-mode) and depletion-mode (D-mode) …
platform, which incorporates enhancement-mode (E-mode) and depletion-mode (D-mode) …
Charge trapping layer enabled high-performance E-mode GaN HEMTs and monolithic integration GaN inverters
In this work, high threshold voltage and breakdown voltage E-mode GaN HEMTs using an
Al: HfO x-based charge trapping layer (CTL) are presented. The developed GaN HEMTs …
Al: HfO x-based charge trapping layer (CTL) are presented. The developed GaN HEMTs …
Transformation of charge polarity at HfO2/GaN interfaces through post-deposition annealing
Y Han, JM Go, K Yang, M Kim, K Kim - Journal of the Korean Physical …, 2024 - Springer
The transformation of charge polarity at HfO2/GaN interfaces was investigated through the
post-deposition annealing (PDA) at 500° C, 700° C and 900° C for 3 min. The change in …
post-deposition annealing (PDA) at 500° C, 700° C and 900° C for 3 min. The change in …
Improved performance of GaN metal-insulator-semiconductor high-electron-mobility transistors towards power applications
J He - 2024 - theses.lib.polyu.edu.hk
GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) are
potential candidates for the next generation of high-power electronics. To further reduce …
potential candidates for the next generation of high-power electronics. To further reduce …