Design and Performance Analysis of 10T SRAM Cell Using Dopingless Vertical Nanowire Tunnel FET with NC Effect
A Bhardwaj, P Kumar, B Raj - 2024 IEEE 4th International …, 2024 - ieeexplore.ieee.org
In this manuscript the SRAM cell using IOT is proposed by the use of doping less vertical
nanowire tunnel FET with NC effect NC-ED-VNW-TFET. Here the device is designed with …
nanowire tunnel FET with NC effect NC-ED-VNW-TFET. Here the device is designed with …