Real-time prediction of crystal/melt interface shape during Czochralski crystal growth

J Ding, L Liu - CrystEngComm, 2018 - pubs.rsc.org
The shape of the crystal/melt interface during Czochralski crystal growth strongly influences
the crystal quality. In this paper, a novel method for real-time detection of the varied interface …

In situ visualization of the quasi-periodic crystal growth interface fluctuation by growth interface electromotive force spectrum in a Czochralski system

Y Zhu, S Lin, Z Liu, W Wang, D Ma, B Wang - CrystEngComm, 2019 - pubs.rsc.org
Inhomogeneity and striations stemming from growth interface fluctuation impair the
performance of bulk single crystals. Although an enormous number of theoretical and …

Influence of magnetic flux concentrator on the induction heating process in crystal growth systems-geometry investigation

H Heidari, MH Tavakoli, SO Sobhani… - …, 2018 - pubs.rsc.org
In this paper, a magnetic flux concentrator (MFC) is reported, and its geometry effect on the
induction heating process has been calculated in a Czochralski crystal growth system using …

Global simulation of an RF Czochralski furnace during different stages of germanium single crystal growth

M Honarmandnia, MH Tavakoli, H Sadeghi - CrystEngComm, 2016 - pubs.rsc.org
The mass and heat transfer in an inductively heated Czochralski crystal growth furnace
during a crystal growth process is investigated numerically for a germanium semiconductor …

Influence of Active Afterheater in the Crystal Growth of Gallium Oxide via Edge-Defined Film-Fed Growing Method

WH Jeong, SM Choi, SM Lim, YJ Shin, SY Bae… - Crystals, 2023 - mdpi.com
In this study, we explored the effect of an active afterheater on the growth of gallium oxide
single crystals using the EFG method. We analyzed the temperature distribution of the …

Control of melt flow and oxygen distribution using traveling magnetic field during directional solidification of silicon ingots

Y Shao, Z Li, Q Yu, L Liu - Silicon, 2020 - Springer
Traveling magnetic field (TMF) is a potential method to control the melt flow and impurity
transport during the directional solidification (DS) of silicon ingots. We numerically study the …

Global simulation of an RF Czochralski furnace during different stages of germanium single crystal growth, part II: to investigate the effect of the crucible's relative …

M Honarmandnia, MH Tavakoli, H Sadeghi - CrystEngComm, 2017 - pubs.rsc.org
By changing the vertical relative position of the crucible against the induction coil, the flow
and thermal fields in the melt are seriously affected. The distribution of heat generation …

Growth of MgO doped near stoichiometric LiNbO 3 single crystals by a hanging crucible Czochralski method using a ship lockage type powder feeding system …

T Yan, Y Leng, Y Yu, D Sun, J Zhan… - …, 2014 - pubs.rsc.org
MgO doped near stoichiometric LiNbO3 (MgOSLN) crystals have great potential for use in
periodically poled structured LiNbO3 (PPLN) for doubling frequency lasers and optical …

Nd: MgO: LiTaO 3 crystal for self-doubling laser applications: growth, structure, thermal and laser properties

D Sun, Y Leng, Y Sang, X Kang, S Liu, X Qin, K Cui… - …, 2013 - pubs.rsc.org
Nd3+ and Mg2+ co-doped LiTaO3 (Nd: MgO: LT) crystal has great potential for applications
in self-frequency doubling (SFD) lasers, and self-optical parametric oscillation (SOPO) …

The role of inner and internal radiation on the melt growth of sapphire crystal

MH Tavakoli, TA Abasi, S Omid… - Crystal Research …, 2013 - Wiley Online Library
In this paper, for an inductively heated Czochralski furnace used to grow sapphire single
crystal, influence of the inner (wall‐to‐wall) and crystal internal (bulk) radiation on the …