The performance of strained silicon (Si) as the channel material for today's metal-oxide-
semiconductor field-effect transistors may be reaching a plateau. New channel materials …

The composition, structure, light emission and oxidation kinetics of Si 1− x Ge x alloy
nanocrystals (∼ 3 nm in diameter) synthesized by nonthermal plasma have been …

ABSTRACT We grow 28Si/SiGe heterostructures by reduced-pressure chemical vapor
deposition and terminate the stack without an epitaxial Si cap but with an amorphous Si-rich …

A combination of the materials science, manufacturing processes, and pioneering research
and developments of SiGe and strained-Si have offered an unprecedented high level of …

Vertical nanostructure technologies are becoming more important for the down scaling of
nanoelectronic devices such as logic transistors or memories. Such devices require dense …

The present invention provides a method for forming quan tum tunneling devices comprising
the steps of:(1) providing a quantum well, the quantum well comprising a composite …

The rates of low temperature atomic oxygen-assisted oxidation of strained epitaxial Si1xGex
(x 0.05, 0.1, and 0.2) layers have been measured and compared with the rate of oxidation of …

Formation of Ge nanocrystals embedded in HfAlO high-k dielectric by co-sputtering of HfO2,
Al2O3, and Ge, followed by rapid thermal annealing was demonstrated. Analysis by …

Silicon germanium alloys have received considerable attention in recent years for their
potential application in advanced electronic and optoelectronic devices. 1–5 The oxidation …

Since the inception of the first transistors in the 1940s, the immense body of work on the
Group IV semiconductors, Si and Ge, has spearheaded spectacular advances in modern …