Effective Suppression of MIS Interface Defects Using Boron Nitride toward High-Performance Ta-Doped-β-Ga2O3 MISFETs
XX Li, Y Sun, G Zeng, YC Li, R Zhang… - The Journal of …, 2022 - ACS Publications
β-Ga2O3 is considered an attractive candidate for next-generation high-power electronics
due to its large band gap of 4.9 eV and high breakdown electrical field of 8 MV/cm. However …
due to its large band gap of 4.9 eV and high breakdown electrical field of 8 MV/cm. However …
Cryogenic Mobility Enhancement in Si MOS Devices via SiO2 Regrowth
Cryogenic mobility enhancement, corres-ponding to the reduction of interfacial disorder, is
always a research focus in Si-based MOS device manufacturing toward practical quantum …
always a research focus in Si-based MOS device manufacturing toward practical quantum …
Effect of high temperature annealing on cryogenic transport properties of silicon MOSFETs with a thin SiO2/HfO2 stacked dielectric
Z Li, GD Yuan, D Zhang, YM Liu, HR Long… - Semiconductor …, 2023 - iopscience.iop.org
Quantum computing is expected to break the computing power bottleneck with the help of
quantum superposition and quantum entanglement. In order to fabricate fault-tolerant …
quantum superposition and quantum entanglement. In order to fabricate fault-tolerant …
Electron transport characteristics in dual gate-controlled 30 nm-thick silicon membrane
The exploration of multi-gate-controlled electron transport characteristics is always a
research focus in Si-based device development and optimization. In this work, we report …
research focus in Si-based device development and optimization. In this work, we report …