We have investigated the band structure of tensile-strained germanium using a 30 band k⋅
p formalism. This multiband formalism allows to simultaneously describe the valence and …

A 30-band k∙ p method taking into account spin-orbit coupling is used to describe the band
diagram of Ge, Si, and GaAs over the whole Brillouin zone on an extent of 5 eV above and 6 …

The electronic energy band structure of strained and unstrained Si, Ge, and SiGe alloys is
examined in this work using a 30-level k∙ p analysis. The energy bands are at first obtained …

We investigate, theoretically, charge-noise-induced spin dephasing of a hole confined in a
quasi-two-dimensional silicon quantum dot. Central to our treatment is accounting for higher …

We report on fabrication and characterization of ultra-thin suspended single crystalline flat
silicon membranes with thickness down to 6 nm. We have developed a method to control the …

We report on the energy band gap and band lineup of SiGe∕ Si heterostructures either in
the case of coherently strained quantum wells or in the case of SiGe∕ Si self-assembled …

The direct bandgap found in hexagonal germanium and some of its alloys with silicon allows
for an optically active material within the group-IV semiconductor family with various …

Strain-induced changes to the electronic structure of nanoscale materials provide a
promising avenue for expanding the optoelectronic functionality of semiconductor …

Density functional calculations on silicon clusters show that strain effects on the band gap
display qualitatively new trends for dots smaller than∼ 2 nm. While the bulk indirect band …

A 40-band k⋅ p model is used to compute the standard k⋅ p band parameters at Γ⁠, X⁠,
and L valleys in direct-band-gap bulk materials for T d group semiconductors. The values of …