Micro light-emitting diode (micro-LED) display, mainly based on inorganic GaN-based LED,
is an emerging technique with high contrast, low power consumption, long lifetime and fast …

Inorganic micro light-emitting diodes (micro-LEDs) based on III-V compound semiconductors
have been widely studied for self-emissive displays. From chips to applications, integration …

Selective area epitaxy (SAE) can be used to grow highly uniform III–V nanostructure arrays
in a fully controllable way and is thus of great interest in both basic science and device …

In recent years, GaN nanorods are emerging as a very promising novel route toward devices
for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices …

Group-III nitride nanowire structures, including GaN, InN, AlN and their alloys, have been
intensively studied in the past decade. Unique to this material system is that its energy …

Multicolor single InGaN/GaN dot-in-nanowire light emitting diodes (LEDs) were fabricated
on the same substrate using selective area epitaxy. It is observed that the structural and …

There have been rapidly increasing demands for flexible lighting apparatus, and micrometer-
scale light-emitting diodes (LEDs) are regarded as one of the promising lighting sources for …

Interferometric lithography (IL) is a powerful technique for the definition of large‐area,
nanometer‐scale, periodically patterned structures. Patterns are recorded in a light …

The research on perovskite light‐emitting diodes (PeLEDs) has experienced an exponential
growth in the past six years. The highest external quantum efficiencies (EQEs) have …

Efficient light-emitting diodes and photovoltaic energy-harvesting devices are expected to
play an important role in the continued efforts towards sustainable global power …