Hybrid graphene/silicon Schottky photodiode with intrinsic gating effect
We propose a hybrid device consisting of a graphene/silicon (Gr/Si) Schottky diode in
parallel with a Gr/SiO 2/Si capacitor for high-performance photodetection. The device …
parallel with a Gr/SiO 2/Si capacitor for high-performance photodetection. The device …
In Situ Dielectric Al2O3/β‐Ga2O3 Interfaces Grown Using Metal–Organic Chemical Vapor Deposition
S Roy, AE Chmielewski… - Advanced Electronic …, 2021 - Wiley Online Library
High quality dielectric‐semiconductor interfaces are critical for reliable high‐performance
transistors. This paper reports the in situ metal–organic chemical vapor deposition of Al2O3 …
transistors. This paper reports the in situ metal–organic chemical vapor deposition of Al2O3 …
Interface trapping in (2¯ 01) β-Ga2O3 MOS capacitors with deposited dielectrics
A Jayawardena, RP Ramamurthy, AC Ahyi… - Applied Physics …, 2018 - pubs.aip.org
The electrical properties of interfaces and the impact of post-deposition annealing have
been investigated in gate oxides formed by low pressure chemical vapor deposition (LPCVD …
been investigated in gate oxides formed by low pressure chemical vapor deposition (LPCVD …
[HTML][HTML] On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors
By means of combined current-voltage and capacitance-voltage sweep and transient
measurements, we present the effects of forward-bias stress and charge trapping …
measurements, we present the effects of forward-bias stress and charge trapping …
First demonstration of AlSiO as gate dielectric in GaN FETs; applied to a high performance OG-FET
Gate dielectricplays an integral role in advancing the performance and reliability of GaN-
based transistors. Si-alloying of aluminum oxide (Al 2 O 3) dielectrics have been shown to …
based transistors. Si-alloying of aluminum oxide (Al 2 O 3) dielectrics have been shown to …
Degradation Mechanisms of GaN‐Based Vertical Devices: A Review
M Meneghini, E Fabris, M Ruzzarin… - … status solidi (a), 2020 - Wiley Online Library
This article reviews most recent results on the reliability of vertical GaN‐based devices, by
presenting a few case studies focused on the stability and degradation of high‐voltage GaN …
presenting a few case studies focused on the stability and degradation of high‐voltage GaN …
Detection of defect levels in vicinity of Al2O3/p-type GaN interface using sub-bandgap-light-assisted capacitance–voltage method
M Akazawa, Y Tamamura, T Nukariya, K Kubo… - Journal of Applied …, 2022 - pubs.aip.org
Defect levels in the vicinity of the Al 2 O 3/p-type GaN interface were characterized using a
sub-bandgap-light-assisted capacitance–voltage (C–V) method. For metal–oxide …
sub-bandgap-light-assisted capacitance–voltage (C–V) method. For metal–oxide …
[HTML][HTML] An improved methodology for extracting interface state density at Si3N4/GaN
In this Letter, a series of metal-insulator-semiconductor capacitors consisting of Si 3 N 4
dielectrics with different thicknesses on GaN have been fabricated to investigate their …
dielectrics with different thicknesses on GaN have been fabricated to investigate their …
[HTML][HTML] Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions
UV-assisted capacitance–voltage (C–V) and current–voltage (I–V) measurements were
performed on∼ 20 nm HfO 2/GaN metal–insulator–semiconductor capacitors. The effects of …
performed on∼ 20 nm HfO 2/GaN metal–insulator–semiconductor capacitors. The effects of …
[HTML][HTML] Deep UV-assisted capacitance–voltage characterization of post-deposition annealed Al2O3/β-Ga2O3 (001) MOSCAPs
In this Letter, the interface state density (D it) and bulk trap density (n bulk) in post-deposition
annealed Al 2 O 3/β-Ga 2 O 3 (001) metal–oxide–semiconductor capacitors (MOSCAPs) are …
annealed Al 2 O 3/β-Ga 2 O 3 (001) metal–oxide–semiconductor capacitors (MOSCAPs) are …