Machine-learning-assisted n-GaN-Au/PANI gas sensor array for intelligent and ultra-accurate ammonia recognition
D Han, Y Wang, Y Wang, Q Duan, D Li, Y Ge… - Chemical Engineering …, 2024 - Elsevier
Gallium nitride (GaN) based gas sensors have attracted considerable attention owing to
their excellent physical and chemical properties, and especially mature and controllable …
their excellent physical and chemical properties, and especially mature and controllable …
The study of N-polar GaN/InAlN MOS-HEMT and T-gate HEMT biosensors
Y Liu, Y Ma, H Guo, S Fu, Y Liu, G Wei… - Journal of Physics D …, 2023 - iopscience.iop.org
The sensing performance of N-polar GaN/InAlN MOS-HEMT biosensors for neutral
biomolecules was investigated and compared with the Ga-polar MOS-HEMT and N-polar T …
biomolecules was investigated and compared with the Ga-polar MOS-HEMT and N-polar T …
Impact of barrier layer thickness on DC and RF performance of AlGaN/GaN high electron mobility transistors
This work investigates the impact of barrier layer thickness on DC and RF performance of a
GaN HEMT device, targeting the low noise high gain application. An optimisation workflow …
GaN HEMT device, targeting the low noise high gain application. An optimisation workflow …
Modulated Electric Field to Analyze Channel Coupling in InAlN/GaN Double-Channel HEMTs
To study the channel coupling effect of InAlN/GaN Double-Channel HEMTs (DC-HEMT)
under different electric field strengths (E f), T-CAD simulations and actual device tests were …
under different electric field strengths (E f), T-CAD simulations and actual device tests were …