As foreseen by Keyes in the late 1960s, the self-heating effect has emerged as an important
concern for device performance, output power density, run-time variability, and reliability of …

Hot carrier injection (HCI) can generate interface traps or oxide traps mainly by dissociating
the Si-H or Si-O bond, thus affecting device performances such as threshold voltage and …

With technology node scaling down to 5 nm, the narrow device geometry confines the
material thermal conductivity and further aggravates the self-heating effect in gate-all-around …

The aging test of semiconductor devices plays a crucial role in modeling the degradation
mechanisms. Conventionally, the voltage stress used to accelerate aging is determined by …

Quantum confinement in 3-D device structure together with the newly employed materials
like silicon-germanium (SiGe) in advanced technologies (eg, FinFET, nanowire, nanosheets …

With the continuous scaling in technology nodes, the transistor self-heating effect (SHE)
emerges as a growing threat to circuit reliability. Increasingly confined transistor structures …

The evolution of transistor topology from planar to confined geometry transistors (ie, FinFET,
Nanowire FET, Nanosheet FET) has met the desired performance specification of sub-20 nm …

FinFETs have a bright future for advanced analog/RF and digital circuit design in 5G/6G
technology. As the integration density increases, the self-heating effect (SHE) becomes …

Trap density refers to the density of electronic trap states within dielectric materials that can
capture and release charge carriers (electrons or holes) in a semiconductor channel …

In this work, we are the first to demonstrate how well-established EDA tool flows can be
employed to upheave Self-Heating Effects (SHE) from individual devices at the transistor …