With the increasing demand of silicon carbide (SiC) power devices that outperform the
silicon-based devices, high cost and low yield of SiC manufacturing process are the most …

In this review paper, several new approaches about the 3C-SiC growth are been presented.
In fact, despite the long research activity on 3C-SiC, no devices with good electrical …

In this study, single crystal (sc) and nanocrystalline (nc) 3C-SiC samples were subjected to
30 keV He ion irradiation across various doses while maintaining a temperature of 800° C …

Silicon carbide nanoparticles (SiC nps) were modified by changing the injection amount
using 1 MeV high-energy electron as radiation source. When the injection volume reaches …

Silicon carbide (SiC) is emerging rapidly in novel photonic applications thanks to its unique
photonic properties facilitated by the advances of nanotechnologies such as nanofabrication …

In Part I of a two-part report, we provide a detailed and systematic review of the latest
progress in cutting-edge innovations for the silicon carbide (SiC) material system, focusing …

High-performance microwave absorption and lightweight design have evolved into the
foremost critical considerations in the practical application of modern microwave absorbing …

The past decade has seen the emergence of ab initio computational methods for calculating
phonon-limited carrier mobilities in semiconductors with predictive accuracy. More realistic …

Despite the promising properties, the problem of cubic silicon carbide (3C-SiC)
heteroepitaxy on silicon has not yet been resolved and its use in microelectronics is limited …

Silicon carbide is an important structural and electronic ceramic material that finds many
uses in a wide variety of applications that require stability at extreme conditions. In this study …