Electronic apparatus and methods of forming the electronic apparatus include a tantalum
lanthanide oxynitride film on a substrate for use in a variety of electronic systems. The …

Electronic apparatus and methods may include a hafnium tantalum oxynitride film on a
substrate for use in a variety of electronic systems. The hafnium tantalum oxynitride film may …

4,542,870 A 9, 1985 Howell 5,252,370 A 10/1993 Tominaga et al. 5,334,433 A 8/1994
Tominaga 5,364,708 A 11/1994 Tominaga 5,401,609 A 3, 1995 Haratani et al. 5,406,546 A …

Electrical and reliability properties of ultrathin La 2 O 3 gate dielectric have been
investigated. The measured capacitance of 33/spl Aring/La 2 O 3 gate dielectric is 7.2 μF/cm …

We have investigated the electrical characteristics of Al 2 O 3 and AlTiO/sub x/MIM
capacitors from the IF (100 KHz) to RF (20 GHz) frequency range. Record high capacitance …

In this research study, the effects of different parameters on the electron transfer rate from
three quantum dots (QDs), CdSe, CdS, and CdTe, on three metal oxides (MOs), TiO2, SnO2 …

We have studied ultrathin Al2O3 and HfO2 gate di-electrics on Ge grown by ultrahigh
vacuum-reactive atomic-beam deposition and ultraviolet ozone oxidation. Al2O3–Ge gate …

Atomic layer deposition (ALD) can be used to form a dielectric layer of zirconium aluminum
oxynitride (ZrAlON) for use in a variety of electronic devices. Forming the dielectric layer may …

An MOS-type semiconductor device comprises two semi conductors separated by an
insulator. The two Semiconduc tors comprise monocrystal Semiconductors, each having a …

This work demonstrates the integration of Al/sub 2/O/sub 3/gate-dielectrics into a sub 0.1/spl
mu/m n-MOS process using polycrystalline silicon gates, Devices incorporating Al/sub …