Control of defect processes in photovoltaic materials is essential for realizing high-efficiency
solar cells and related optoelectronic devices. Native defects and extrinsic dopants tune the …

Although several advances have been made in the characterization and the mitigation of
light-induced degradation (LID), industrial silicon solar cells still suffer from different types of …

This article is the first in a series of two reviews on the properties of iron in silicon. It offers a
comprehensive summary of the current state of understanding of fundamental physical …

A key efficiency-limiting factor in silicon-based photovoltaic (PV) devices is the quality of the
silicon material itself. With evolving cell architectures that better address other efficiency-loss …

This article reviews the progress made in the studies of copper in silicon over the last
several years and puts forward a comprehensive model of the behavior of copper in silicon …

This article continues the review of fundamental physical properties of iron and its
complexes in silicon (Appl. Phys. A 69, 13 (1999)), and is focused on ongoing applied …

Transition-metal contaminants are ubiquitous in Si devices, being introduced both during
wafer growth and in subsequent processing. 1–4 This is frequently detrimental because the …

Dopants and defects are important in semiconductor and magnetic devices. Strategies for
controlling doping and defects have been the focus of semiconductor physics research …

Lithium ion batteries have been considered as a promising energy‐storage solution, the
performance of which depends on the electrochemical properties of each component …

We examine the light‐induced carrier lifetime degradation and regeneration at elevated
temperature in multicrystalline silicon (mc‐Si) wafers of different thicknesses. The …