A review on morphotropic phase boundary in fluorite-structure hafnia towards DRAM technology
In the present hyper-scaling era, memory technology is advancing owing to the demand for
high-performance computing and storage devices. As a result, continuous work on …
high-performance computing and storage devices. As a result, continuous work on …
Ferroelectricity of hafnium oxide-based materials: Current status and future prospects from physical mechanisms to device applications
W Yang, C Yu, H Li, M Fan, X Song, H Ma… - Journal of …, 2023 - iopscience.iop.org
The finding of the robust ferroelectricity in HfO 2-based thin films is fantastic from the view
point of both the fundamentals and the applications. In this review article, the current …
point of both the fundamentals and the applications. In this review article, the current …
The effect of stress on HfO2-based ferroelectric thin films: A review of recent advances
HfO 2-based thin films have raised considerable interest in ferroelectric memory devices due
to their thickness scalability and process compatibility with CMOS. Stress exhibits a …
to their thickness scalability and process compatibility with CMOS. Stress exhibits a …
Low-power and high-speed HfLaO-based FE-TFTs for artificial synapse and reconfigurable logic applications
Emulating the human nervous system to build next-generation computing architectures is
considered a promising way to solve the von Neumann bottleneck. Transistors based on …
considered a promising way to solve the von Neumann bottleneck. Transistors based on …
Bi-layered plasmonic photothermal nanocomposite heater for laser-irradiation based rapid digital annealing of metal and oxide films
YJ Kim, JJ Kim, YU Kim, MK Cho, SH Ko, J Shim… - Applied Surface …, 2024 - Elsevier
A photonic annealing technique implanting highly energetic photons provides the
characteristic advantage of triggering designated chemical/physical evolutions in materials …
characteristic advantage of triggering designated chemical/physical evolutions in materials …
Effect of La Spatial Uniformity on Ferroelectric Properties of HfO2 Films Deposited by Atomic Layer Deposition Method
J Jeong, Y Han, J Joo, H Sohn - physica status solidi (a), 2024 - Wiley Online Library
In this study, the effect of supercycle scheme for La‐doping in HfO2 films by atomic layer
deposition (ALD) on their ferroelectric properties is investigated along with the variation of …
deposition (ALD) on their ferroelectric properties is investigated along with the variation of …
[PDF][PDF] Ferroelectric Memristors-Materials, Interfaces and Applications
R Athle - 2024 - portal.research.lu.se
Ferroelectric Memristors - Materials, Interfaces and Applications Athle, Robin Page 1
Ferroelectric Memristors - Materials, Interfaces and Applications Athle, Robin 2024 Link to …
Ferroelectric Memristors - Materials, Interfaces and Applications Athle, Robin 2024 Link to …