CdSe quantum dot-based nanocomposites for ultralow-power memristors

J Bera, A Betal, A Sharma, U Shankar… - ACS Applied Nano …, 2022 - ACS Publications
The explosion in digital communication with the huge amount of data and the internet of
things (IoT) led to the increasing demand for data storage technology with faster operation …

Embedding azobenzol-decorated tetraphenylethylene into the polymer matrix to implement a ternary memory device with high working temperature/humidity

PK Zhou, LL Zong, KY Song, ZC Yang… - … Applied Materials & …, 2021 - ACS Publications
The development of new high-density memories that can work in harsh environments such
as high temperature and humidity will be significant for some special occasions such as oil …

The Old Polyoxometalates in New Application as Molecular Resistive Switching Memristors

H Yang, G Yue, T Li, L Du, H Li… - European Journal of …, 2023 - Wiley Online Library
The coming big‐data era has created a huge demand for next‐generation memory
technologies with characters of higher data‐storage densities, faster access speeds, lower …

Non-volatile memristor-based artificial synaptic behavior of redox-active organic composites

A Betal, J Bera, S Sahu - Journal of Materials Chemistry C, 2023 - pubs.rsc.org
Cost-effectiveness, easy scalability and a simple fabrication process make the organic
molecule-based resistive memory a very promising technology for new-generation data …

Charge trapped CdS quantum dot embedded polymer matrix for a high speed and low power memristor

A Betal, J Bera, A Sharma, AK Rath… - Physical Chemistry …, 2023 - pubs.rsc.org
The data storage requirement in the digital world is increasing day by day with the
advancement of the internet of things. In this respect, nonvolatile resistive random-access …

Enhanced ternary memory performances with high-temperature tolerance in AIE@ PBI composites by tuning the azobenzol substituents on tetraphenylethylene

PK Zhou, KY Song, LL Zong, ZC Yang, HH Li… - Materials Today …, 2022 - Elsevier
The design of functional composites with desired film crystallinity and definite switching
mechanism is the key to achieve high performance multilevel memorizers. Three …

Simultaneously elevating the resistive switching level and ambient-air-stability of 3D perovskite (TAZ-H) PbBr3-based memory device by encapsulating into …

K Song, L Du, G Yue, T Li, H Li, S Zheng, Z Chen… - Journal of Colloid and …, 2023 - Elsevier
The study about simultaneously enhancing the resistive switching level and ambient-air-
stability of perovskite-based memorizers will promote its commercialization. Here, a new 3D …

Colloidal MoS2 quantum dots for high-performance low power resistive memory devices with excellent temperature stability

J Bera, A Betal, A Sharma, AK Rath, S Sahu - Applied Physics Letters, 2022 - pubs.aip.org
Conventional memory technologies are facing enormous problems with downscaling, and
are hence unable to fulfill the requirement of big data storage generated by a huge …

Metal chalcogenide quantum dots for photochemical and electrochemical hydrogen generation: recent advancements and technological challenges

SA Ali, I Sadiq, T Ahmad - Nanotechnology, 2025 - iopscience.iop.org
The performance of heterogeneous catalysis, specifically photochemical and
electrochemical hydrogen evolution reaction fundamentally relies upon the prudent choice …

Elevating the resistive memory from binary to ternary by introducing trialkyl phosphorus into binaphthol/ferrocene cores in their polystyrene composites

YZ Liu, Y Liu, BJ Chen, HL Yang, XL Lin, HH Li… - Materials Today …, 2022 - Elsevier
The design of electrically active composites by modifying with functional groups with definite
switching mechanism is the key to develop new multi-level memorizers. In this work, five …