Plasma chemical behaviour of reactants and reaction products during inductively coupled CF4 plasma etching of SiO2
H Fukumoto, I Fujikake, Y Takao… - … Sources Science and …, 2009 - iopscience.iop.org
A two-dimensional fluid model has been developed to study plasma chemical behaviour of
etch products as well as reactants during inductively coupled CF 4 plasma etching of SiO 2 …
etch products as well as reactants during inductively coupled CF 4 plasma etching of SiO 2 …
On the applicability of self-consistent global model for the characterization of Cl2/Ar inductively coupled plasma
AM Efremov, GH Kim, JG Kim, AV Bogomolov… - Microelectronic …, 2007 - Elsevier
This work reports the results on the influence of gas mixing ratio, gas pressure (0.26–3.3 Pa)
and input power (400–900W) on the Cl2/Ar plasma parameters in the planar inductively …
and input power (400–900W) on the Cl2/Ar plasma parameters in the planar inductively …
Etching characteristics and mechanism of SiN x films for nano-devices in CH2F2/O2/Ar inductively coupled plasma: effect of O2 mixing ratio
J Son, A Efremov, SJ Yun, GY Yeom… - … of Nanoscience and …, 2014 - ingentaconnect.com
Etching characteristics and mechanisms of low-temperature SiN x thin films for nano-devices
in CH2F2/O2/Ar inductively-coupled plasmas were studied. The etching rates of SiN x thin …
in CH2F2/O2/Ar inductively-coupled plasmas were studied. The etching rates of SiN x thin …
Effect of gas mixing ratio on MgO etch behaviour in inductively coupled BCl3/Ar plasma
G Kim, CI Kim, AM Efremov - Vacuum, 2005 - Elsevier
The etching behaviour of MgO thin films in BCl3/Ar plasma was investigated. It was found
that the increasing Ar mixing ratio under the constant total pressure conditions causes the …
that the increasing Ar mixing ratio under the constant total pressure conditions causes the …
Etch characteristics of HfO2 thin films by using CF4/Ar inductively coupled plasma
PS Kang, JC Woo, YH Joo, CI Kim - Vacuum, 2013 - Elsevier
In this study, we carried out an investigation of the etching characteristics (etch rate,
selectivity) of HfO2 thin films in the CF4/Ar inductively coupled plasma (ICP). The maximum …
selectivity) of HfO2 thin films in the CF4/Ar inductively coupled plasma (ICP). The maximum …
Etching characteristic of ZnO thin films in an inductively coupled plasma
JC Woo, GH Kim, JG Kim, CI Kim - Surface and Coatings Technology, 2008 - Elsevier
The etching characteristics of ZnO and etch selectivities of ZnO to SiO2 in CF4/Ar, Cl2/Ar and
BCl3/Ar plasma were investigated. The etch rate in CF4/Ar plasma was lower than that in Cl …
BCl3/Ar plasma were investigated. The etch rate in CF4/Ar plasma was lower than that in Cl …
A model-based, Bayesian approach to the CF4/Ar etch of SiO2
The design and optimization of highly nonlinear and complex processes like plasma etching
is challenging and timeconsuming. Significant effort has been devoted to creating plasma …
is challenging and timeconsuming. Significant effort has been devoted to creating plasma …
A method to accelerate creation of plasma etch recipes using physics and Bayesian statistics
Next generation semiconductor technologies like high density memory storage require
precise 2D and 3D nanopatterns. Plasma etching processes are essential to achieving the …
precise 2D and 3D nanopatterns. Plasma etching processes are essential to achieving the …
Etching characteristics and mechanisms of the MgO thin films in the CF4/Ar inductively coupled plasma
A Efremov, JC Woo, GH Kim, CI Kim - Microelectronic engineering, 2007 - Elsevier
The etching characteristics and mechanisms of MgO thin films in CF4/Ar inductively coupled
plasma were investigated. It was found that the changes in gas mixing ratio as well as in gas …
plasma were investigated. It was found that the changes in gas mixing ratio as well as in gas …
A study on dry etching for profile and selectivity of ZrO2 thin films over Si by using high density plasma
JC Woo, SG Kim, JG Koo, GH Kim, DP Kim, CH Yu… - Thin Solid Films, 2009 - Elsevier
In this study, we carried out an investigation of the etching characteristics (etch rate,
selectivity to Si) of ZrO2 thin films in the HBr/SF6 high density plasma (HDP) system. The …
selectivity to Si) of ZrO2 thin films in the HBr/SF6 high density plasma (HDP) system. The …