The present inventors have studied to develop a technique to form a coating film of
AlNaforementioned on a facet of a cavity to implement a nitride semiconductor laser device …

(57) ABSTRACT A nitride semiconductor light emitting device includes a first coat film of
aluminum nitride or aluminum oxynitride formed at a light emitting portion and a second coat …

An adhesion layer of a hexagonal crystal is laid on a facet an optical resonator of a nitride
semiconductor laser bar having a nitride-based III-V group compound semiconductor layer …

(73) Assignee: Sharp Kabushiki Kaisha, Osaka (JP) 2003, OO15715 A1 1/2003 Sakai (*)
Notice: Subject to any disclaimer, the term of this(Continued) patent is extended or adjusted …

US7750363B2 - Nitride semiconductor light-emitting device having an end face coating film
and method of manufacturing the same - Google Patents US7750363B2 - Nitride …

(57) ABSTRACT A nitride semiconductor light-emitting element includes a layered
semiconductor body which is made of a group III nitride semiconductor, and includes a light …

BACKGROUND The present disclosure relates to nitride semiconductor light-emitting
devices, speci? cally relates to nitride semicon ductor light-emitting devices in Which a …

There is provided a nitride semiconductor light emitting device having a light emitting portion
coated with a coating film, the light emitting portion being formed of a nitride semiconductor …

Provided is a highly reliable nitride semiconductor laser element having a robust end face
protection film not being peeled even in laser operation. The nitride semiconductor laser …

SUMMARY OF THE INVENTION 0007 We have conducted research with the aim of realiz
ing a nitride semiconductor laser device which does not exhibit low reliability caused by …