RF operation of AlN/Al0. 25Ga0. 75N/AlN HEMTs with f T/f max of 67/166 GHz
We report on highly-scaled Al 0.25 Ga 0.75 N channel high electron mobility transistors.
Regrown ohmic contacts covering the sidewall of the compressively strained Al 0.25 Ga 0.75 …
Regrown ohmic contacts covering the sidewall of the compressively strained Al 0.25 Ga 0.75 …
[HTML][HTML] Polarity control and crystalline quality improvement of AlN thin films grown on Si (111) substrates by molecular beam epitaxy
S Fan, Y Yin, R Liu, H Zhao, Z Liu, Q Sun… - Journal of Applied …, 2024 - pubs.aip.org
We attain N-polar and Al-polar AlN thin films on Si (111) substrates by plasma-assisted
molecular beam epitaxy. The polarity of AlN epilayers has been validated by wet chemical …
molecular beam epitaxy. The polarity of AlN epilayers has been validated by wet chemical …
Low Thermal Resistance of Diamond‐AlGaN Interfaces Achieved Using Carbide Interlayers
HT Aller, TW Pfeifer, A Mamun, K Huynh… - Advanced Materials …, 2024 - Wiley Online Library
This study investigates thermal transport across nanocrystalline diamond/AlGaN (aluminum
gallium nitride) interfaces, crucial for enhancing thermal management in AlGaN‐based …
gallium nitride) interfaces, crucial for enhancing thermal management in AlGaN‐based …
High Voltage (~ 2 kV) field-plated Al0. 64Ga0. 36N-channel HEMTs
High voltage (~ 2 kV) AlGaN-channel HEMTs were fabricated with 64% Aluminum
composition in the channel. The average on-resistance was~ 75 ohm. mm (~ 21 miliohm …
composition in the channel. The average on-resistance was~ 75 ohm. mm (~ 21 miliohm …
Demonstration of Effective Intrinsic Electron Velocity 10 cm/s in Ultrawide Bandgap AlGaN Channel HEMTs
P Seshadri, J Chen, K Stephenson… - … on Electron Devices, 2024 - ieeexplore.ieee.org
This article reports on the effective intrinsic electron velocity exceeding cm/s in high-
composition Al N channel high-electron-mobility transistors (HEMTs) at peak. The small …
composition Al N channel high-electron-mobility transistors (HEMTs) at peak. The small …
1.17 GW/cm2 AlN-based GaN-channel HEMTs on mono-crystalline AlN substrate
M Wolf, F Brunner, C Last, H Halhoul… - IEEE Electron …, 2024 - ieeexplore.ieee.org
AlN-based GaN-channel HEMTs with MOCVD-grown AlGaN/GaN/AlN epistack were
realized on AlN substrates, achieving 400 mA/mm current density at V and 125 V/breakdown …
realized on AlN substrates, achieving 400 mA/mm current density at V and 125 V/breakdown …
AlN/AlGaN heterojunction field-effect transistors with a high-AlN-mole-fraction Al0. 72Ga0. 28N channel grown on single-crystal AlN substrate by metalorganic …
Y Kometani, T Kawaide, S Tanaka… - Japanese Journal of …, 2024 - iopscience.iop.org
This paper presents research results on AlN/AlGaN heterojunction field-effect transistors
(HFETs) with a high-AlN-mole-fraction Al 0.72 Ga 0.28 N channel grown on a single-crystal …
(HFETs) with a high-AlN-mole-fraction Al 0.72 Ga 0.28 N channel grown on a single-crystal …
Heterostructure and Interfacial Engineering for Low-Resistance Contacts to Ultra-Wide Bandgap AlGaN
Y Zhu, AA Allerman, C Joishi, J Pratt… - arXiv preprint arXiv …, 2024 - arxiv.org
We report on the heterostructure and interfacial engineering of metalorganic chemical vapor
deposition (MOCVD) grown reverse-graded contacts to ultra-wide bandgap AlGaN. A record …
deposition (MOCVD) grown reverse-graded contacts to ultra-wide bandgap AlGaN. A record …
Al0.87Ga0.13N/Al0.64Ga0.36N HFET with fT >17 GHz and Vbr > 360 V
Ultra-wide bandgap (AlN, diamond, Ga 2 O 3) have attracted significant research interest for
high power and high frequency applications. Al rich (> 60%) AlGaN channel heterojunction …
high power and high frequency applications. Al rich (> 60%) AlGaN channel heterojunction …