Challenges and Opportunities in Engineering of Next Generation 3D Microelectronic Devices: Improved Performance, Higher Integration Density
In recent years, nanotechnology and material science have evolved and matured, making it
easier and easier to design and fabricate next-generation 3D microelectronics. The process …
easier and easier to design and fabricate next-generation 3D microelectronics. The process …
A review on emerging tunnel FET structures for high-speed and low-power circuit applications
Tunnel FET is found to be a prominent candidate to address the various issues like short
channel effects, thermionic limitation, which are dominant in MOSFET. It has grabbed the …
channel effects, thermionic limitation, which are dominant in MOSFET. It has grabbed the …
Reduction of corner effect in ZG-ES-TFET for improved electrical performance and its reliability analysis in the presence of traps
In this paper, various electrical parameters of a Z-shaped gate elevated source TFET (ZG-ES-
TFET) in the presence of interface traps are investigated. The placement of Z-shaped gate …
TFET) in the presence of interface traps are investigated. The placement of Z-shaped gate …
Impact of Deep Cryogenic Temperatures on High-k Stacked Dual Gate Junctionless MOSFET Performance: Analog and RF analysis
R Ghosh, RP Nelapati - Silicon, 2024 - Springer
This article presents the reliability analysis of a High-k stacked Dual Gate Junction-less
MOSFET at Deep Cryogenic Temperatures (as low as 50 Kelvin) in terms of dc, analog and …
MOSFET at Deep Cryogenic Temperatures (as low as 50 Kelvin) in terms of dc, analog and …
2D analytical modelling of asymmetric junctionless dual material double gate MOSFET for biosensing applications considering steric hindrance issue
The current manuscript for Asymmetric Junctionless Dual Material Double Gate MOSFET
(AJDMDG MOSFET) biosensor reports improved sensitivity for both threshold voltage and …
(AJDMDG MOSFET) biosensor reports improved sensitivity for both threshold voltage and …
Threshold voltage model development of N+ pocket vertical junctionless TFET (V-JL-TFET) as a label free biosensor
This work investigates into the potential application of an improved N+ pocket Vertical
Junctionless TFET (V-JL-TFET) as a label free biosensor. To calculate the sensitivity of the …
Junctionless TFET (V-JL-TFET) as a label free biosensor. To calculate the sensitivity of the …
GaN-based low-power JLDG-MOSFETs: Effects of doping and gate work function
The purpose of this study is to investigate the possibilities of the junction-less double-gate
(JLDG) MOSFET structure with gallium nitride (GaN) channel material to overcome the …
(JLDG) MOSFET structure with gallium nitride (GaN) channel material to overcome the …
Low-bandgap Material Engineering based TFET device for Next-Generation Biosensor Application-A Comprehensive review on Device structure and Sensitivity.
Abstract The Tunnel Field Effect Transistor (TFET) device has emerged as the potential
candidate to replace the Field Effect Transistor (FET)--based biosensor for the label-free …
candidate to replace the Field Effect Transistor (FET)--based biosensor for the label-free …
Composition-Dependent Phonon and Thermodynamic Characteristics of C-Based XxY1−xC (X, Y ≡ Si, Ge, Sn) Alloys
DN Talwar - Inorganics, 2024 - mdpi.com
Novel zinc-blende (zb) group-IV binary XC and ternary XxY1− xC alloys (X, Y≡ Si, Ge, and
Sn) have recently gained scientific and technological interest as promising alternatives to …
Sn) have recently gained scientific and technological interest as promising alternatives to …
[HTML][HTML] Analysis of single event transient impact in Si/Si-Ge Gate-All-Around nanowire FET using TCAD
PS Rajakumar - Results in Engineering, 2025 - Elsevier
The increasing need for high-performance and reliable semiconductor devices in radiation-
prone environments requires a thorough understanding of Single-Event-Transient effects …
prone environments requires a thorough understanding of Single-Event-Transient effects …