The misfit dislocation formation related to plastic strain relaxation in Si or Ge quantum well
layers in SiGe heterostructures for spin qubits tends to negatively affect the qubit behaviors …

This review provides a summary of the existing literature on a crucial raw material for the
production of isotopically pure semiconductors, which are essential for the development of …

The performance and scalability of silicon spin qubits depend directly on the value of the
conduction band valley splitting (VS). In this work, we investigate the influence of …

The valley splitting (VS) of a silicon quantum dot plays an important role for the performance
and scalability of silicon spin qubits. In this paper we investigate the VS of a SiGe/Si/SiGe …

Abstract Silicon (Si), Germanium (Ge) related materials such as SiGe heterostructures or
siliconon-insulator structures (SOI) stand out as excellent material platforms for spin qubits …

Si molecular beam epitaxy (MBE) is an important technology delivering films of high
crystalline quality and chemical purity. Yet, anisotropic surface diffusion originating from Si …