Study of nickel silicide formation and associated fill-factor loss analysis for silicon solar cells with plated Ni-Cu based metallization
MC Raval, AP Joshi, SS Saseendran… - IEEE Journal of …, 2015 - ieeexplore.ieee.org
In this study, the impact of impurities incorporated into plated nickel seed layer on silicide
formation and the influence of annealing temperature on the fill-factor (FF) loss of solar cells …
formation and the influence of annealing temperature on the fill-factor (FF) loss of solar cells …
N2O plasma treatment for minimization of background plating in silicon solar cells with Ni–Cu front side metallization
In this paper we demonstrate that an additional nitrous oxide (N 2 O) plasma treatment step
after the regular SiN x: H anti-reflective coating (ARC) deposition practically eliminates …
after the regular SiN x: H anti-reflective coating (ARC) deposition practically eliminates …
[PDF][PDF] Eutectic Sn-Bi alloy for interconnection of silicon solar cells
PC Hsiao - 2015 - scholar.archive.org
Decreasing wafer thickness and reducing the silver (Ag) consumption present challenges for
the interconnection of silicon (Si) solar cells. The shear stress induced by soldering can lead …
the interconnection of silicon (Si) solar cells. The shear stress induced by soldering can lead …