Sensitivity investigation of junctionless gate-all-around silicon nanowire field-effect transistor-based hydrogen gas sensor

R Chaujar, MG Yirak - Silicon, 2023 - Springer
In this work, a junctionless (JL) gate all around (GAA) silicon nanowire field-effect transistor
sensor for the detection of hydrogen (H2) has been carried out. The sensors are designed to …

TCAD analysis and modelling of gate-stack gate all around junctionless silicon NWFET based bio-sensor for biomedical application

MG Yirak, R Chaujar - 2020 IEEE VLSI DEVICE CIRCUIT AND …, 2020 - ieeexplore.ieee.org
In the present day, metallic oxide semiconductor field-effect transistor-based bio-sensors
have been frequently used for various purposes due to their low cost and other properties. In …

Numerical modelling for triple hybrid gate optimization dielectric modulated junctionless gate all around SiNWFET based uricase and ChOX biosensor

R Chaujar, MG Yirak - Microsystem Technologies, 2024 - Springer
In this manuscript, a numerical model based on the electric field, threshold voltage, sub-
threshold current, and electrostatic potential in cylindrical coordinates using Poisson's …

Operation Principle and Fabrication of TFET

MG Yirak, R Chaujar - Advanced Ultra Low‐Power …, 2023 - Wiley Online Library
Field‐effect transistors, or FETs, are utilized in various electrical applications.
Nanoelectronic circuits based on FETs, on either hand, are inefficient in terms of energy …

[PDF][PDF] Simulation-Driven Fabrication and Performance Evaluation of n-MOSFET using Silvaco Athena and Atlas: From Process to Parameters

M Hossain, K Ahmed, KM Rubyat… - Journal of …, 2014 - researchgate.net
In this work, an n-channel MOSFET of Silvaco TCAD has been fabricated and analyzed
using commercially available simulation software tools, namely Athena and Atlas. The …

[PDF][PDF] Design and performance analysis of A Triple Material Double Gate Cylindrical Gate All Around (TMDG CGAA) MOSFET in Nano-meter Regime

A Menaria, R Pandey, PK Jain - scholar.archive.org
The current work deals with the designing and performance analysis of a Triple Material
Double Gate Cylindrical Gate All Around (TMDG-CGAA) MOSFET in the nanometer regime …