A novel junction less dual gate tunnel FET with SiGe pocket for low power applications

S Bhattacharya, SL Tripathi - 2021 Devices for Integrated …, 2021 - ieeexplore.ieee.org
A novel junction-less dual gate tunnel FET device with P+ Si 1-x Ge x pocket near the source
end is introduced in this paper. The device exhibits sharp subthreshold slope of 63.5 …

Design Transmission Gates Using Double-Gate Junctionless TFETs

S Bhattacharya, SL Tripathi, GH Nayana - Silicon, 2024 - Springer
Transmission gate has been implemented using tunnel field-effect-transistor (TFET) in the
presented work. This work demonstrates the benefits of replacing MOS devices with TFET …

Analysis of nano sheet field effect transistor based on performance under different temperature and doping concentrations for 12 nm device

R Krishna, D Jayanthi, DSS Sam, K Kavitha… - Micro and …, 2024 - Elsevier
This paper presents a simulation study on a 12 nm Gate-all-around n-type Metal Oxide
Semiconductor (GAA-nMOSFET), investigating the effects of temperature variations and …

FreePDK15TFET: An open-source process design kit for 15nm CMOS and TFET devices

K Chen, C Ma, Q Zhang, Y Li, J Zhao… - 2021 IEEE International …, 2021 - ieeexplore.ieee.org
With Moore's law reaching its limits, the use of new materials or new devices' structure has
emerged as the next generation of CMOS devices. Among all, tunneling field-effect …

Homo and hetero junctionless tunnel field effect transistors for mixed signal applications: a review

K Haritha, B Lakshmi - Journal of Nanoparticle Research, 2021 - Springer
This study presents a systematic review of junctionless tunnel field effect transistor (JLTFET)–
based homo-and hetero-based devices/circuits which have gained significant popularity in …

Performance Analysis of AlGaN/GaN Heterostructure Field-Effect Transistor (HFET)

YK Verma, SK Gupta - Advanced VLSI Design and Testability …, 2020 - taylorfrancis.com
In this chapter, the performance analysis of AlGaN/GaN heterostructure field-effect transistor
(AlGaN/GaN HFET) is performed. The AlGaN/GaN HFET provides several merits over Si and …