Crystal Orientation Effect on Electric Energy Storage in Poly(vinylidene fluoride-co-hexafluoropropylene) Copolymers
By using different preparation and processing methods, poly (vinylidene fluoride-co-
hexafluoropropylene)[P (VDF− HFP)] films with different crystal orientations were fabricated …
hexafluoropropylene)[P (VDF− HFP)] films with different crystal orientations were fabricated …
Electrical properties and phase of BaTiO3–SrTiO3 solid solution
It has been known that ABO3 type perovskite ferroelectrics, such as BaTiO3 (BTO) and
SrTiO3 (STO), form a complete solid solution. In this study, Ba1− xSrxTiO3 (BST, x= 0.0–1.0) …
SrTiO3 (STO), form a complete solid solution. In this study, Ba1− xSrxTiO3 (BST, x= 0.0–1.0) …
Anisotropic Properties of Epitaxial Ferroelectric Lead-Free 0.5[Ba(Ti0.8Zr0.2)O3]-0.5(Ba0.7Ca0.3)TiO3 Films
As the energy demand is expected to double over the next 30 years, there has been a major
initiative towards advancing the technology of both energy harvesting and storage for …
initiative towards advancing the technology of both energy harvesting and storage for …
Interface Engineered BaTiO3/SrTiO3 Heterostructures with Optimized High-Frequency Dielectric Properties
Interface engineered BaTiO3/SrTiO3 heterostructures were epitaxially grown on (001) MgO
substrates by pulsed laser deposition. Microstructural characterizations by X-ray diffraction …
substrates by pulsed laser deposition. Microstructural characterizations by X-ray diffraction …
[HTML][HTML] (Ba, Sr) TiO3 tunable capacitors with RF commutation quality factors exceeding 6000
CJG Meyers, CR Freeze, S Stemmer… - Applied Physics Letters, 2016 - pubs.aip.org
The fabrication, measurement, and modeling of radio-frequency (RF), tunable interdigital
capacitors (IDCs) are described. High quality factors of 200 in the S/L-bands combined with …
capacitors (IDCs) are described. High quality factors of 200 in the S/L-bands combined with …
Enhanced dielectric characteristics of preferential (1 1 1)-oriented BZT thin films by manganese doping
Abstract Ba (Zr 0.2 Ti 0.8) O 3 (BZT) and 2 mol% Mn additional doped BZT (Mn–BZT) thin
films were deposited on Pt/Ti/SiO 2/Si by the pulsed laser deposition (PLD) technique under …
films were deposited on Pt/Ti/SiO 2/Si by the pulsed laser deposition (PLD) technique under …
Combined effects of thickness, grain size and residual stress on the dielectric properties of Ba0. 5Sr0. 5TiO3 thin films
T Pečnik, S Glinšek, B Kmet, B Malič - Journal of Alloys and Compounds, 2015 - Elsevier
We studied the microstructure and dielectric properties of Ba 0.5 Sr 0.5 TiO 3 thin films on
polycrystalline alumina substrates with film thicknesses in the range 90–400 nm. Upon …
polycrystalline alumina substrates with film thicknesses in the range 90–400 nm. Upon …
Crystal orientation dependence of the dielectric properties for epitaxial BaZr0. 15Ti0. 85O3 thin films
J Miao, J Yuan, H Wu, SB Yang, B Xu, LX Cao… - Applied physics …, 2007 - pubs.aip.org
Epitaxial Ba 0.15 Zr 0.85 Ti O 3 (BZT) ferroelectric thin films with (001),(011), and (111)
orientations were, respectively, grown on La 0.67 Sr 0.33 Mn O 3 (LSMO) buffered La Al O 3 …
orientations were, respectively, grown on La 0.67 Sr 0.33 Mn O 3 (LSMO) buffered La Al O 3 …
Enhanced tunable properties of Ba0. 6Sr0. 4TiO3 thin films grown on Pt∕ Ti∕ SiO2∕ Si substrates using MgO buffer layers
W Zhu, J Cheng, S Yu, J Gong, Z Meng - Applied physics letters, 2007 - pubs.aip.org
Ba 0.6 Sr 0.4 Ti O 3 (BST) thin films were prepared on MgO buffered Pt (111)∕ Ti∕ Si O 2∕
Si substrates by pulsed laser deposition. The crystallographic structure, interface …
Si substrates by pulsed laser deposition. The crystallographic structure, interface …
Enhanced ferroelectric, dielectric properties of Fe-doped PMN-PT thin films
C Feng, T Liu, X Bu, S Huang - Nanomaterials, 2021 - mdpi.com
Fe-doped 0.71 Pb (Mg1/3Nb2/3) O3-0.29 PbTiO3 (PMN-PT) thin films were grown in
Pt/Ti/SiO2/Si substrate by a chemical solution deposition method. Effects of the annealing …
Pt/Ti/SiO2/Si substrate by a chemical solution deposition method. Effects of the annealing …