Arbitrary alloy semiconductor material based DG MOSFET for high-frequency industrial and hybrid consumer applications
N Gowthaman, VM Srivastava - 2021 IEEE AFRICON, 2021 - ieeexplore.ieee.org
The performance of the transistors is a measure for the system to perform desired output.
The research in the development of transistors is continuously growing and defines an …
The research in the development of transistors is continuously growing and defines an …
[PDF][PDF] Optimization of 14nm Horizontal Double Gate for Optimum Threshold Voltage Using L9 Taguchi Method.
N Nizam, AM AH, F Salehuddin… - International …, 2022 - ijneam.unimap.edu.my
Silvaco ATHENA TCAD tools are used to model and simulate the electrical properties and
characterization of the suggested layout of a 14 nm gate length (Lg) Double Gate Bilayer …
characterization of the suggested layout of a 14 nm gate length (Lg) Double Gate Bilayer …
[PDF][PDF] Work function variations on electrostatic and RF performances of JLSDGM Device
KE Kaharudin, F Salehuddin, ASM Zain… - Indonesian Journal of …, 2021 - researchgate.net
This paper offers a systematic analysis on the impact of work function (WF) variations on
electrostatic and radio frequency (RF) performances of nchannel junctionless strained …
electrostatic and radio frequency (RF) performances of nchannel junctionless strained …
An Investigation of the Effect of the Work-Function Variation of a Monolithic 3D Inverter Stacked with MOSFETs
GJ Lee, YS Yu - Micromachines, 2022 - mdpi.com
The effect of the work-function variation (WFV) of metal-oxide-semiconductor field-effect
transistor (MOSFET) gates on a monolithic 3D inverter (M3DINV) structure is investigated in …
transistor (MOSFET) gates on a monolithic 3D inverter (M3DINV) structure is investigated in …
Analysis of Short Channel Effects for Junction Less MOSFET With Metal Gates and High-κ Spacers
The fabrication process of traditional semiconductor devices at sub-22 nm scale have
become very difficult and challenging. The novel multi gate MOSFET devices with no …
become very difficult and challenging. The novel multi gate MOSFET devices with no …
[PDF][PDF] Analysis of Short Channel Effects for Junction Less MOSFET With Metal Gates and High-κ Spacers
DIT SoET - researchgate.net
The fabrication process of traditional semiconductor devices at sub-22 nm scale have
become very difficult and challenging. The novel multi gate MOSFET devices with no …
become very difficult and challenging. The novel multi gate MOSFET devices with no …