Diffuse scattering from rough surfaces in THz communication channels
Recent years have seen a tremendous increase in the demand for wireless bandwidth. To
support this demand by innovative and resourceful use of technology, future communication …
support this demand by innovative and resourceful use of technology, future communication …
Active 220-and 325-GHz frequency multiplier chains in an SiGe HBT technology
E Öjefors, B Heinemann… - IEEE Transactions on …, 2011 - ieeexplore.ieee.org
A 325-GHz× 18 frequency multiplier chain implemented in af τ/f max= 250 GHz/380 GHz
evaluation SiGe heterojunction bipolar transistor technology is presented. The chain …
evaluation SiGe heterojunction bipolar transistor technology is presented. The chain …
A 0.53 THz reconfigurable source module with up to 1 mW radiated power for diffuse illumination in terahertz imaging applications
This paper presents a high-power 0.53 THz source module with programmable diversity to
adjust the brightness and the direction of light to obtain the desired diffuse lighting …
adjust the brightness and the direction of light to obtain the desired diffuse lighting …
Integrated intelligent electromagnetic radiator design for future THz communication: A review
Advances in 6G communication changes how machines and humans interact. The blossom
of new applications demands significantly higher data bandwidth while preserving the …
of new applications demands significantly higher data bandwidth while preserving the …
A broadband mm-wave and terahertz traveling-wave frequency multiplier on CMOS
A wideband frequency multiplier that effectively generates and combines the even
harmonics from multiple transistors is proposed. It takes advantage of standing-wave …
harmonics from multiple transistors is proposed. It takes advantage of standing-wave …
Metamorphic HEMT MMICs and modules operating between 300 and 500 GHz
A Tessmann, A Leuther, V Hurm… - IEEE Journal of Solid …, 2011 - ieeexplore.ieee.org
In this paper, we present the development of submillimeter-wave monolithic integrated
circuits (S-MMICs) and modules for use in next-generation sensors and high-data-rate …
circuits (S-MMICs) and modules for use in next-generation sensors and high-data-rate …
216-and 316-GHz 45-nm SOI CMOS signal sources based on a maximum-gain ring oscillator topology
J Sharma, H Krishnaswamy - IEEE transactions on microwave …, 2012 - ieeexplore.ieee.org
This paper introduces a maximum-gain ring oscillator (MGRO) topology that maximizes the
power gain (PG) achieved by the active devices in a ring oscillator using appropriately …
power gain (PG) achieved by the active devices in a ring oscillator using appropriately …
160–310 GHz frequency doubler in 65-nm CMOS with 3-dBm peak output power for rotational spectroscopy
A 160-310 GHz frequency doubler for rotational spectroscopy with a driver amplifier is
demonstrated in a 65-nm bulk CMOS process. At 0-dBm input power, the measured output …
demonstrated in a 65-nm bulk CMOS process. At 0-dBm input power, the measured output …
Affection of THz indoor communication links by antenna misalignment
Antenna misalignment can lead to a severe performance deterioration of wireless THz
communication links. In this paper, we propose to model the misalignment as a random …
communication links. In this paper, we propose to model the misalignment as a random …
Terahertz imaging with CMOS/BiCMOS process technologies
UR Pfeiffer, E Öjefors - 2010 Proceedings of ESSCIRC, 2010 - ieeexplore.ieee.org
Contrary to the common belief, silicon devices may very well operate beyond their cut-off
frequency. The push towards terahertz frequencies, though, presents both challenges and …
frequency. The push towards terahertz frequencies, though, presents both challenges and …