Junctionless-accumulation-mode stacked gate GAA FinFET with dual-k spacer for reliable RFIC design
This study investigates how incorporating a dual-k spacer (SiO 2+ HfO 2) affects the RFIC
design feasibility of a junctionless-accumulation-mode (JAM) stacked-gate (GS) gate-all …
design feasibility of a junctionless-accumulation-mode (JAM) stacked-gate (GS) gate-all …
Analog and linearity performance analysis of ferroelectric vertical tunnel field effect transistor with and without source pocket
This study examines the electrical performance characteristics of a ferroelectric vertical
tunnel field‐effect transistor (TFET) with and without a source pocket (Si0. 5Ge0. 5). The …
tunnel field‐effect transistor (TFET) with and without a source pocket (Si0. 5Ge0. 5). The …
Performances of gate stacked heterojunction SELBOX and SOI tunnel FETs including interface trap charges: A simulation study
In this work, the influence of interface trap charges (ITCs) on electrical parameters of gate
stacked heterojunction silicon on insulator Tunnel FET (GSHJ-SOITFET) and GSHJ-TFET on …
stacked heterojunction silicon on insulator Tunnel FET (GSHJ-SOITFET) and GSHJ-TFET on …
Design and analysis of a novel asymmetric source dual-material DG-TFET with germanium pocket
A Kaur, G Saini - Silicon, 2023 - Springer
This article proposes a novel asymmetric source dual-material double-gate Tunnel Field-
Effect Transistor with Ge-pocket (ASDM-DGTFET). The use of a Ge-pocket near the source …
Effect Transistor with Ge-pocket (ASDM-DGTFET). The use of a Ge-pocket near the source …
Design and Investigation of Gate Overlap Step Shape Double Gate (SSDG) TFET for Photosensing Applications
N Tiwari, R Saha, B Choudhary - Transactions on Electrical and Electronic …, 2024 - Springer
This work examines the optical properties of Gate Overlap Step Shape Double Gate Tunnel
Field Effect Transistor (GO-SSDG-TFET) based photosensor in the visible spectrum range at …
Field Effect Transistor (GO-SSDG-TFET) based photosensor in the visible spectrum range at …
Simulation study of leakage current in junction less field effect transistor
A Chaudhary, AK Singh, MK Yadav… - AIP Conference …, 2024 - pubs.aip.org
Now, with the progress of semiconductor technology, MOS devices leakage current has
developed into a bottleneck. Leakage current components start to resemble ON state current …
developed into a bottleneck. Leakage current components start to resemble ON state current …
Design and Comparative Analysis of Silicon and GaAs MOSFET for Low Power Applications
R Kaur Sidhu, JS Ubhi, A Agarwal… - … of Nanoelectronics and …, 2023 - ingentaconnect.com
The demand for low power consumption in modern electronic devices has led to the
development of various technologies, including usage of different materials such as Si and …
development of various technologies, including usage of different materials such as Si and …
Analysis of the DC and RF performance of the Double-Gate-Source-Drain Schottky Barrier Tunnel Field Effect Transistor (DGSD-STFET) for high frequency …
P Anusuya, V Shalini, P Kumar - 2023 3rd International …, 2023 - ieeexplore.ieee.org
In this study, the performance of a Dual gate source drain schottky barrier tunnel field effect
transistor (DGSD-STFET) is analysed using a high k dielectric composed of HfO 2 and a low …
transistor (DGSD-STFET) is analysed using a high k dielectric composed of HfO 2 and a low …
[PDF][PDF] 1 School of Advanced Sciences, VIT-Chennai University, Tamil Nadu 600127, India, Email: anusuya. p2020@ vitstudent. ac. in 2 School of Electronics VIT …
P Anusuya, V Shalini, P Kumar - researchgate.net
In this study, the performance of a Dual gate source drain schottky barrier tunnel field effect
transistor (DGSD-STFET) is analysed using a high k dielectric composed of HfO2 and a low …
transistor (DGSD-STFET) is analysed using a high k dielectric composed of HfO2 and a low …