Nanoelectronic devices based on 2D materials are far from delivering their full theoretical
performance potential due to the lack of scalable insulators. Amorphous oxides that work …

Two-dimensional semiconductors could be used to fabricate ultimately scaled field-effect
transistors and more-than-Moore nanoelectronic devices. However, these targets cannot be …

Mechanically exfoliated 2D hexagonal boron nitride (h‐BN) is currently the preferred
dielectric material to interact with graphene and 2D transition metal dichalcogenides in …

Calcium fluoride is a dielectric material with a wide bandgap ($12.1 eV) and a relatively high
dielectric constant ($6.8) that forms a van der Waals interface with two-dimensional (2D) …

Graphene is a promising material for applications as a channel in graphene field-effect
transistors (GFETs) which may be used as a building block for optoelectronics, high …

The electronic band structures of ultra-wide gap CaF 2 are investigated with both the hybrid
functional and the efficient generalized gradient approximation (GGA)+ U scheme. The …

Abstract Two-dimensional (2D) semiconductors are currently considered a very promising
alternative to Si for channel applications in next-generation field-effect transistors of sub-5 …

Anisotropic dielectric and optical properties of two-dimensional (2D) calcium and
magnesium difluorides were investigated in the vacuum ultraviolet (VUV) region of the …

Calcium fluoride is widely investigate known to be a promising solid material for optics,
electronics, and electrochemistry. In this work, we report the successful preparation of …

Light emission from metal–insulator–semiconductor junctions (MISJs) has been explored for
decades as a possible on-chip light source; however it is not clear whether the mechanism …