On current-voltage and capacitance-voltage characteristics of metal-semiconductor contacts
A TURUT - Turkish Journal of Physics, 2020 - journals.tubitak.gov.tr
It is expected the fact that the current following across metal-semiconductor (MS) rectifying
contact named as Schottky barrier diode (SBDs) and effect of sample temperature on their …
contact named as Schottky barrier diode (SBDs) and effect of sample temperature on their …
Nanoscale transport properties at silicon carbide interfaces
F Roccaforte, F Giannazzo… - Journal of Physics D …, 2010 - iopscience.iop.org
Wide bandgap semiconductors promise devices with performances not achievable using
silicon technology. Among them, silicon carbide (SiC) is considered the top-notch material …
silicon technology. Among them, silicon carbide (SiC) is considered the top-notch material …
Materials and processes for Schottky contacts on silicon carbide
Silicon carbide (4H-SiC) Schottky diodes have reached a mature level of technology and are
today essential elements in many applications of power electronics. In this context, the study …
today essential elements in many applications of power electronics. In this context, the study …
Protein-mediated layer-by-layer syntheses of freestanding microscale titania structures with biologically assembled 3-D morphologies
Y Fang, Q Wu, MB Dickerson, Y Cai, S Shian… - Chemistry of …, 2009 - ACS Publications
A simple protein-mediated approach for preparing freestanding (silica free) microscale
titania structures with morphologies inherited from complex-shaped, three-dimensional (3-D) …
titania structures with morphologies inherited from complex-shaped, three-dimensional (3-D) …
Temperature dependent I–V characteristics of an Au/n-GaAs Schottky diode analyzed using Tung's model
The current–voltage (I–V) characteristics of Au/n-GaAs contacts prepared with
photolithography technique have been measured in the temperature range of 80–320K. The …
photolithography technique have been measured in the temperature range of 80–320K. The …
Temperature-dependent electrical characteristics of Alq3/p-Si heterojunction
Abstract Al/Alq3 (organic materials)/p-Si device was fabricated by the use of spin coating
technique, and it was investigated by using current-voltage measurement in a wide …
technique, and it was investigated by using current-voltage measurement in a wide …
Solid state reactions between SiC and Ir
A Camarano, J Narciso, D Giuranno - Journal of the European Ceramic …, 2019 - Elsevier
Abstract Reactivity between SiC and Ir as a function of SiC-crystallinity was investigated by
diffusion bonding technique under a vacuum and over the temperature range of 1200 …
diffusion bonding technique under a vacuum and over the temperature range of 1200 …
n-ZnO/p-4H-SiC diode: Structural, electrical, and photoresponse characteristics
Epitaxial n-type ZnO film has been grown, on a commercial 5 μm thick p-type 4H-SiC (00.1)
Al doped epilayer, by atomic layer deposition. A full width at half maximum of the ZnO 00.2 …
Al doped epilayer, by atomic layer deposition. A full width at half maximum of the ZnO 00.2 …
[HTML][HTML] The Overview of Silicon Carbide Technology: Status, Challenges, Key Drivers, and Product Roadmap
M Kamiński, K Król, N Kwietniewski, M Myśliwiec… - Materials, 2024 - mdpi.com
Arguably, SiC technology is the most rapidly expanding IC manufacturing technology driven
mostly by the aggressive roadmap for battery electric vehicle penetration and also industrial …
mostly by the aggressive roadmap for battery electric vehicle penetration and also industrial …
On the negative capacitance behavior in the forward bias of Au/n–4H–SiC (MS) and comparison between MS and Au/TiO2/n–4H–SiC (MIS) type diodes both in dark …
In order to see the effect of interfacial layer on electrical characteristics both Au/n–4 H–SiC
(MS) and Au/TiO 2/n–4 H–SiC (MIS) type Schottky barrier diodes (SBDs) were fabricated …
(MS) and Au/TiO 2/n–4 H–SiC (MIS) type Schottky barrier diodes (SBDs) were fabricated …