Defects in a silicon (Si) substrate induced by plasma exposure—plasma-induced damage
(PID)—were investigated using various techniques. The authors performed a …

Cross-sectional cathodoluminescence (CL) and scanning capacitance microscopy (SCM)
measurements were carried out for silicon carbide (SiC) metal–oxide–semiconductor field …

Low-energy cross-sectional cathodoluminescence (CL) with a beam energy of 1 keV was
applied to Si-ion-implanted β-Ga 2 O 3 (− 201) wafers to investigate implantation damage …

Defect creation in both the vertical and lateral directions of Si substrates during plasma
processing has become a critical problem in the fabrication of three-dimensional structural …

The behavior of hole polarons in β-gallium oxide (Ga 2 O 3) has attracted significant
attention. Depth-resolved cathodoluminescence (CL) was used to investigate the minority …

In the manufacturing process of micro LED displays, the laser process is very effective for
accurate and fast transfer of micro chips. However, it is necessary to select the appropriate …

This chapter describes the latest analysis examples, combing Raman, IR, and CL
spectroscopy. Strained Si techniques, such as incorporating SiGe is essential forboost …

The effect of impact ionization of excitons by free charge carriers on the exciton
concentration in single-crystal silicon (c-Si) at room temperature and at a high injection level …

При высоком уровне инжекции исследовано влияние ударной ионизации экситонов
свободными носителями заряда на концентрацию экситонов в монокристаллическом …

抄録 Cathodoluminescence (CL) is a kind of light emission as a result of electron beam
irradiation to various materials. In the measurement technique using CL, scanning electron …