Role of surface energy in nanowire growth

X Yuan, J Yang, J He, HH Tan… - Journal of Physics D …, 2018 - iopscience.iop.org
As research interest moves from micromaterials to nanomaterials and quantum structures,
the surface energy of the structures has an increasing impact on the nanomaterial growth …

Synthesis of SnO2 nanowires using thermal chemical vapor deposition with SnO powder and their application as self-powered ultraviolet photodetectors

S Kim, H Lim, S Kim, B Pandit, J Cho… - Journal of Alloys and …, 2023 - Elsevier
We report on the performance of self-powered ultraviolet (UV) photodetectors composed of
SnO 2 nanowire (NW) networks. SnO 2 NWs with a length of several hundred micrometers …

Dramatic increase in SWIR detection for GeSn strip detector with graphene hybrid structure

G Lin, Y Zhao, K Yu, CP Veeramalai, R Ma… - Journal of Alloys and …, 2023 - Elsevier
GeSn materials with tunable bandgaps covering the entire shortwave infrared (SWIR) band
present a new paradigm for silicon-based SWIR photodetection. However, crystal quality …

A Photoemission Analysis of Gold on Silicon Regarding the Initial Stages of Nanowire Metal-Catalyzed Vapor–Liquid–Solid Growth

D Ferrah, J Penuelas, F Boudaa, C Botella… - The Journal of …, 2022 - ACS Publications
When semiconducting nanowires are grown by vapor–liquid–solid mechanism using gold
as catalyst, the first stages, ie, gold deposition and subsequent annealing, are of prime …

Where is the required lattice match in horizontal growth of nanowires?

B Nikoobakht, A Herzing - Nanoscale, 2014 - pubs.rsc.org
The horizontal growth of nanowires (NWs) using the surface-directed vapor–liquid–solid
(SVLS) process has been demonstrated for a number of semiconductors and shows the …

Examination of the growth conditions influence on the planar silicon nanowire morphology by Monte Carlo simulation

SV Mantsurova, NL Shwartz - Materials Science in Semiconductor …, 2025 - Elsevier
This work is devoted to the Monte Carlo simulation of planar silicon nanowire growth by the
vapor-liquid-solid mechanism on the Si (100) surface. It is demonstrated that the planar …

In-plane growth of germanium nanowires on nanostructured Si (001)/SiO2 substrates

F Lange, O Ernst, T Teubner, C Richter… - Nano …, 2020 - iopscience.iop.org
Abstract Germanium (Ge) nanowires (NWs) were grown in-plane on nano-structured Si
(001)/SiO 2 substrates by molecular beam epitaxy using gold (Au) as the solvent. The site …

Monte Carlo simulation of planar GaAs nanowire growth

AA Spirina, NL Shwartz - Journal of Crystal Growth, 2024 - Elsevier
Abstract The Monte Carlo model for the planar GaAs nanowire growth via the vapor–liquid-
solid mechanism on GaAs substrate using a gallium droplet as a catalyst is realized. The …

Sn-guided defect-free GeSn lateral growth on Si by molecular beam epitaxy

D Zhang, Z Liu, D Zhang, X Zhang… - The Journal of …, 2015 - ACS Publications
A new strategy to grow defect-free GeSn alloy matrixes (GSMs) on Si (111) substrates with
the assistance of Sn is discussed. It is found that the compressive strain induced by a large …

Vapor–liquid–solid etch of semiconductor surface channels by running gold nanodroplets

B Nikoobakht, A Herzing, S Muramoto, J Tersoff - Nano letters, 2015 - ACS Publications
We show that Au nanoparticles spontaneously move across the (001) surface of InP, InAs,
and GaP when heated in the presence of water vapor. As they move, the particles etch …