This article reviews spintronics based memories, in particular, magnetic random access
memory (MRAM) in a systematic manner. Debuted as a humble 4 Mb product by FreeScale …

Magnetic Random Access Memory (MRAM) is a very promising emerging memory
technology because of its various advantages such as nonvolatility, high density and …

A novel nonvolatile flip-flop based on spin-orbit torque magnetic tunnel junctions (SOT-
MTJs) is proposed for fast and ultralow energy applications. A case study of this nonvolatile …

Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) has potential to
become a universal memory technology because of its various advantageous features such …

Magnetic Random Access Memory (MRAM) is a very promising emerging memory
technology because of its various advantages such as non-volatility, high density and …

It has become increasingly challenging to respect Moore's well-known law in recent years.
Energy efficiency and manufacturing constraints are among the main challenges to current …

Magnetoresistive memories, such as spin-transfer torque random access memory and
magnetic latches (M-latch), are emerging memory technologies that offer attractive features …

The continuous downscaling in CMOS devices has increased leakage power and limited the
performance to a few GHz. The research goal has diverted from operating at high …

BACKGROUND Flip-flops and latches are well-known non-volatile circuit elements
commonly used in electronic integrated circuits. Flip-flops and latches may be used for data …

Two decades after the discovery of the giant magnetoresistance that revolutionizes the hard
disk drive, the rapid development of spin torque-based magnetic random access memory …