[HTML][HTML] Junction temperature optical sensing techniques for power switching semiconductors: A review
Recent advancements in power electronic switches provide effective control and operational
stability of power grid systems. Junction temperature is a crucial parameter of power …
stability of power grid systems. Junction temperature is a crucial parameter of power …
Performance improvement of 263 nm AlGaN DUV LDs with different doping concentration and composition graded EBL Techniques
HU Rehman, NU Rahman, I Haq, F Wang… - Physica Scripta, 2024 - iopscience.iop.org
As part of this study, we present a study on the act of electrically driven Laser Diode (LD)
using trinary Aluminum Gallium Nitride (AlGaN) with optimized doping concentrations. To …
using trinary Aluminum Gallium Nitride (AlGaN) with optimized doping concentrations. To …
[HTML][HTML] A design and comparative investigation of graded AlxGa1 − x N QB for W-Al0.58GaN/W-Al0.64–0.58 GaN DUV laser diode on AlN substrate
HU Rehman, NU Rahman, I Haq, F Wang… - The European Physical …, 2024 - Springer
In this study, we aim to improve the efficiency of AlGaN-based deep-UV-LD by thickness
grading and composition grading of the quantum barrier. We proposed the structure of DUV …
grading and composition grading of the quantum barrier. We proposed the structure of DUV …
[PDF][PDF] 上波导层In 摩尔分数对InGaN 基蓝光激光器性能研究
付星瑞， 李书平 - Acta Optica Sinica, 2023 - researching.cn
摘要基于实验样品结构, 利用PICS3D 模拟软件, 构建了具有同样结构的InGaN 基蓝光激光器,
并采取了与实验样品一致的内部参数测定方式, 结果表明, 内部损耗相对误差为3. 5 …
并采取了与实验样品一致的内部参数测定方式, 结果表明, 内部损耗相对误差为3. 5 …
Enhancing GaN/AlGaN MQW Micro LED Optical and Electrical Performance with a Non-uniform LQB
H Mohamed, N Sengouga, A Meftah - Transactions on Electrical and …, 2023 - Springer
In this work, physical device modeling of ultraviolet micro light-emitting diodes (UV-µLEDs)
based on GaN/AlGaN multiple quantum wells (MQWs) is presented. We numerically …
based on GaN/AlGaN multiple quantum wells (MQWs) is presented. We numerically …
[PDF][PDF] 基于空穴存储层的深紫外激光二极管性能优化
王梦真， 王瑶， 魏士钦， 王芳， 全智… - Laser & Optoelectronics …, 2022 - researching.cn
摘要为改善深紫外激光二极管(DUV-LD) 有源区内空穴注入效率低的问题, 在传统DUV-LD
结构基础上引入空穴存储层(HRL), 并将HRL 改为Al 摩尔分数从n 区到p 区递减的五阶梯HRL …
结构基础上引入空穴存储层(HRL), 并将HRL 改为Al 摩尔分数从n 区到p 区递减的五阶梯HRL …
[PDF][PDF] AlGaN 紫外激光器量子垒层和n 型波导层设计优化
刘璐， 李书平 - Laser & Optoelectronics Progress, 2023 - researching.cn
摘要为提高紫外激光器的光电性能, 降低阈值电流, 提出采用Al 组分渐变的量子垒层(QBs)
以及Al 组分渐变的n 型波导层(n-WG) 优化标准结构——参考实验样品设计的AlGaN …
以及Al 组分渐变的n 型波导层(n-WG) 优化标准结构——参考实验样品设计的AlGaN …
[PDF][PDF] 蓝宝石衬底多层AlGaN 薄膜透射谱研究
李浩杰， 张燕 - Acta Optica Sinica, 2020 - researching.cn
摘要全组分AlGaN 是指Al 组分(原子数分数) 在0~ 1 之间的AlGaN. 通过将组分引入到AlGaN
的复折射率中, 在200~ 800nm 光谱范围内建立了全组分AlGaN 复折射率公式 …
的复折射率中, 在200~ 800nm 光谱范围内建立了全组分AlGaN 复折射率公式 …
Suppression of hole leakage by adding a hole blocking layer prior to the first quantum barrier in GaN‐based near‐ultraviolet laser diodes
Y Xing, DG Zhao, DS Jiang, X Li, F Liang… - … status solidi (a), 2017 - Wiley Online Library
Compared with GaN‐based visible GaN/InGaN multiple‐quantum‐well laser diodes (LDs),
near‐ultraviolet LDs may suffer from a sever hole leakage due to the shallower quantum …
near‐ultraviolet LDs may suffer from a sever hole leakage due to the shallower quantum …
Application of atom probe tomography for advancing GaN based technology
OG Licata, B Mazumder - … Journal of High Speed Electronics and …, 2019 - World Scientific
Atom Probe Tomography (APT) has emerged as a stand-alone technique for material
characterization at the sub-nanometer level, with unrivaled spatial resolution, coupled with …
characterization at the sub-nanometer level, with unrivaled spatial resolution, coupled with …