Perspectives of 2D materials for optoelectronic integration

J An, X Zhao, Y Zhang, M Liu, J Yuan… - Advanced Functional …, 2022 - Wiley Online Library
Abstract 2D materials show wide‐ranging physical properties with their electronic bandgaps
varying from zero to several electronvolts, offering a rich platform to explore novel electronic …

Gate-controlled reversible rectifying behavior investigated in a two-dimensional diode

Q Liu, JJ Li, D Wu, XQ Deng, ZH Zhang, ZQ Fan… - Physical Review B, 2021 - APS
By using density functional theory and ab initio quantum-transport simulation, we study the
Schottky barrier and the rectifying behavior of diodes consisting of the two-dimensional …

Electronic Transport Properties and Nanodevice Designs for Monolayer

Y Gao, J Liao, H Wang, Y Wu, Y Li, K Wang, C Ma… - Physical Review …, 2022 - APS
A family of MA 2 Z 4 materials has recently inspired great interest due to its exotic geometry
and intriguing electronic properties. Here we investigate the electronic transport and …

Recent advances in 2D group VB transition metal chalcogenides

J Su, G Liu, L Liu, J Chen, X Hu, Y Li, H Li, T Zhai - Small, 2021 - Wiley Online Library
Abstract 2D materials have received considerable research interest owing to their abundant
material systems and remarkable properties. Among them, 2D group VB transition metal …

Nanodevices engineering and spin transport properties of MnBi2Te4 monolayer

Y An, K Wang, S Gong, Y Hou, C Ma, M Zhu… - npj Computational …, 2021 - nature.com
Abstract Two-dimensional (2D) magnetic materials are essential for the development of the
next-generation spintronic technologies. Recently, layered van der Waals (vdW) compound …

Magnetic Nanodevices and Spin-Transport Properties of a Two-Dimensional Monolayer

J Chen, Y Guo, C Ma, S Gong, C Zhao, T Wang… - Physical Review …, 2023 - APS
The two-dimensional intrinsic ferromagnet Cr S Cl monolayer has considerable potential for
application in the development of spintronic devices because of properties such as robust …

Design high performance field-effect, strain/gas sensors of novel 2D penta-like Pd2P2SeX (X= O, S, Te) pin-junction nanodevices: A study of transport properties

X Dong, T Chen, G Zhou - Journal of Alloys and Compounds, 2024 - Elsevier
In the realm of modern nanodevices, attaining high-switching performance and fulfilling
sensing detection functions in high-precision environments are of paramount importance …

High-performance 5.1 nm in-plane Janus WSeTe Schottky barrier field effect transistors

ZQ Fan, ZH Zhang, SY Yang - Nanoscale, 2020 - pubs.rsc.org
Using ab initio quantum-transport simulations, we studied the intrinsic transfer
characteristics and benchmarks of the ballistic performance of 5.1 nm double-gated Schottky …

The adjustable electronic and photoelectric properties of the WS2/WSe2 and WSe2/WTe2 van der Waals heterostructures

K Cen, S Yan, N Yang, X Dong, L Xie, M Long, T Chen - Vacuum, 2023 - Elsevier
Abstract The two-dimensional (2D) transition metal dichalcogenides (TMDs) have interesting
physical properties and potential applications in the field of electronics and nanophotonics …

Realizing the Switching of Optoelectronic Memory and Ultrafast Detector in Functionalized‐Black Phosphorus/MoS2 Heterojunction

C Liu, S Ding, Q Tian, X Hong, W Su… - Laser & Photonics …, 2023 - Wiley Online Library
A single device with switchable functions is highly attractive to the growing demands of
complex optoelectronics. However, most of the currently reported devices either exhibit a …