H Shen, CG Woychik, AR Sitaram - US Patent 10,446,456, 2019 - Google Patents
Dies (110) with integrated circuits are attached to a wiring substrate (120), possibly an interposer, and are protected by a protective substrate (410) attached to a wiring substrate …
L Wang, H Shen, R Katkar - US Patent 9,165,793, 2015 - Google Patents
US PATENT DOCUMENTS tribution layer (RDL) of the interposer. The lower surface of the handle wafer is bonded to the upper surface of the inter poser such that the die is disposed …
H Shen, L Wang, R Katkar - US Patent 9,324,626, 2016 - Google Patents
US9324626B2 - Interposers with circuit modules encapsulated by moldable material in a cavity, and methods of fabrication - Google Patents US9324626B2 - Interposers with circuit modules …
H Shen, CG Woychik, AR Sitaram - US Patent 9,252,127, 2016 - Google Patents
Semiconductor integrated circuits (110) or assemblies are disposed at least partially in cavities between two interposers (120). Conductive vias (204M) pass through at least one of …
H Shen, L Wang, R Katkar, CG Woychik… - US Patent …, 2016 - Google Patents
Die (110) are attached to an interposer (420), and the interposer/die assembly is placed into a lid cavity (510). The lid (210) is attached to the top of the assembly, possibly to the …
H Shen, CG Woychik, SR Arkalgud - US Patent 11,205,600, 2021 - Google Patents
Dies (110) with integrated circuits are attached to a wiring substrate (120), possibly an interposer, and are protected by a protective substrate (410) attached to a wiring substrate …
A Chakraborty, K Duraisami, A Sathanur… - … Transactions on Very …, 2008 - ieeexplore.ieee.org
The thermal gradients existing in high-performance circuits may significantly affect their timing behavior, in particular, by increasing the skew of the clock net and/or altering …
A Oukaira, DE Touati, A Hassan, M Ali… - … on Optimization and …, 2022 - ieeexplore.ieee.org
In this paper, we propose a thermal profile based on the finite element method (FEM). The proposed model is used to predict the temperature profile of the Xilinx™ SPARTAN-3E Field …